Darlington Transistors. LMBT6427LT3G Datasheet


LMBT6427LT3G Transistors. Datasheet pdf. Equivalent


LMBT6427LT3G


Darlington Transistors
LESHAN RADIO COMPANY, LTD.

Darlington Transistors

NPN Silicon
z W. e declare that the material of product compliance with RoHS requirements.
z .S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Ordering Information

Device
LMBT6427LT1G S-LMBT6427LT1G LMBT6427LT3G S-LMBT6427LT3G
MAXIMUM RATINGS

Marking 1V 1V

Shipping 3000/Tape&Reel 10000/Tape&Reel

LMBT6427LT1G S-LMBT6427LT1G
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)

Rating

Symbol

Collector–Emitter Voltage

V CEO

Collector–Base Voltage

V CBO

Emitter–Base Voltage

V EBO

Collector Current — Continuous I C

THERMAL CHARACTERISTICS

Value 40 40 12 500

Unit Vdc Vdc Vdc mAdc

Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature

Symbol PD
RθJA PD
RθJA TJ , Tstg

Max Unit 225 mW

1.8 mW/°C 556 °C/W 300 mW

2.4 417 –55 to +150

mW/°C °C/W
°C

DEVICE MARKING

(S-)LMBT6427LT1G = 1V

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 10 mAdc, V BE = 0) Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0...



LMBT6427LT3G
LESHAN RADIO COMPANY, LTD.
Darlington Transistors
NPN Silicon
z W. e declare that the material of product
compliance with RoHS requirements.
z .S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Ordering Information
Device
LMBT6427LT1G
S-LMBT6427LT1G
LMBT6427LT3G
S-LMBT6427LT3G
MAXIMUM RATINGS
Marking
1V
1V
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT6427LT1G
S-LMBT6427LT1G
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Value
40
40
12
500
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
(S-)LMBT6427LT1G = 1V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 10 mAdc, V BE = 0)
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CE = 25Vdc, I B = 0)
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CES
I CBO
I EBO
40
40
12
1.0
50
50
1
BASE
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
nAdc
3
COLLECTOR
2
EMITTER
Rev.O 1/6

LMBT6427LT3G
LESHAN RADIO COMPANY, LTD.
LMBT6427LT1G , S-LMBT6427LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
hFE
(I C = 10 mAdc, V CE = 5.0 Vdc)
(I C = 100 mAdc, V CE = 5.0Vdc)
(I C = 500 mAdc, V CE = 5.0Vdc)
Collector–Emitter Saturation Voltage
(I C = 50 mAdc, I B = 0.5 mAdc)
(I C = 500 mAdc, I B = 0.5 mAdc)
Base–Emitter Saturation Voltage
(I C = 500 mAdc, I B = 0.5 mAdc)
Base–Emitter On Voltage
(I C = 50 mAdc, V CE = 5.0Vdc)
VCE(sat)(3)
V BE(sat)
V BE(on)
10,000
20,000
14,000
––
––
––
Max
100,000
200,000
140,000
1.2
1.5
2.0
1.75
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
C obo
Input Capacitance
(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)
C ibo
Current Gain–High Frequency
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
|h fe |
Noise Finure
NF
(V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz )
3. Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0%
–– 7.0
–– 15
1.3 —
— 10
Unit
––
Vdc
Vdc
Vdc
pF
pF
Vdc
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/6




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