L2SD1781KQLT3G

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 SOT-23 /TO-236AB FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) COLLECTOR 3 1 BASE 2 EMITTER ORDERING INFORMATION Device L2SD1781KQLT1G S-L2SD1781KQLT1G L2SD1781KQLT3G S-L2SD1781KQLT3G L2SD1781KRLT1G S-L2SD1781KRLT1G L2SD1781KRLT3G S-L2SD1781KRLT3G Marking Shipping AFQ 3000 Tape & Reel AFQ 10000 Tape & Reel AFR 3000 Tape & Reel AFR 10000 Tape & Reel Rev.O 1/4 FElectrical characteristics (Ta = 25_C) LESHAN RADIO COMPANY, LTD. L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series DEVICE MARKING L2SD1781KQLT1G=AFQ L2S1781KRLT1G=AFR ltem hFE Q 120~270 R 180~390 Electrical characteristic curves Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series A L 3 BS 12 VG C D H K 0.037 0.95 SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILL...