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L2SB1197KQLT3G Dataheets PDF



Part Number L2SB1197KQLT3G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Low Frequency Transistor
Datasheet L2SB1197KQLT3G DatasheetL2SB1197KQLT3G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 1 ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOT– 23 (TO–236AB) DEVICE MARKING AND ORD.

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LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 1 ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOT– 23 (TO–236AB) DEVICE MARKING AND ORDERING INFORMATION Device L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G L2SB1197KRLT1G S-L2SB1197KRLT1G L2SB1197KRLT3G S-L2SB1197KRLT3G MAXIMUM RATINGS(Ta=25qC) Marking AHQ AHQ AHR AHR Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −40 −32 −5 −0.8 0.2 150 −55 to 150 Unit V V V A W °C °C ELECTRICAL CHARACTERISTICS(Ta=25qC) Parameter Symbol Min. Collector-base breakdown voltage BVCBO −40 Collector-emitter breakdown voltage BVCEO −32 Emitter-base breakdown voltage BVEBO −5 Collector cutoff current ICBO − Emitter cutoff current IEBO − Collector-emitter saturation voltage VCE(sat) − DC current transfer ratio hFE 120 Transition frequency fT − Output capacitance Cob − Typ. Max. Unit −−V −−V −−V − −0.5 µA − −0.5 µA − −0.5 V − 390 − 200 − MHz 12 30 pF hFE values are classified as follows : Item(*) Q R hFE 120~270 180~390 1 BASE 3 COLLECTOR 2 EMITTER Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −4V IC/IB= −0.5A/ −50mA VCE= −3V, IC= −100mA VCE= −5V, IE=50mA, f=100MHz VCB= −10V, IE=0A, f=1MHz Rev.O 1/3 LESHAN RADIO COMPANY, LTD. L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series Rev.O 2/3 LESHAN RADIO COMPANY, LTD. L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series A L 3 BS 12 VG C D H K SOT-23 J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 0.037 0.95 0.035 0.9 0.037 0.95 0.079 2.0 0.031 0.8 inches mm Rev.O 3/3 .


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