Frequency Transistor. L2SB1197KQLT3G Datasheet


L2SB1197KQLT3G Transistor. Datasheet pdf. Equivalent


L2SB1197KQLT3G


Low Frequency Transistor
LESHAN RADIO COMPANY, LTD.

Low Frequency Transistor L2SB1197KQLT1G Series

PNP Silicon

S-L2SB1197KQ LT1G Series

FEATURE

ƽHigh current capacity in compact package. IC = í0.8A.

3

ƽEpitaxial planar type. ƽNPN complement: L2SD1781K

1

ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

2 SOT– 23 (TO–236AB)

DEVICE MARKING AND ORDERING INFORMATION

Device
L2SB1197KQLT1G S-L2SB1197KQLT1G
L2SB1197KQLT3G S-L2SB1197KQLT3G
L2SB1197KRLT1G S-L2SB1197KRLT1G
L2SB1197KRLT3G S-L2SB1197KRLT3G
MAXIMUM RATINGS(Ta=25qC)

Marking AHQ
AHQ AHR
AHR

Shipping 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel

Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature

Symbol VCBO VCEO VEBO IC PC Tj Tstg

Limits −40 −32 −5 −0.8 0.2 150 −55 to 150

Unit V V V A W °C °C

ELECTRICAL CHARACTERISTICS(Ta=25qC)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −40

Collector-emitter breakdown voltage BVCEO −32

Emitter-base breakdown voltage

BVEBO −5

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE 120

Transi...



L2SB1197KQLT3G
LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
L2SB1197KQLT1G Series
PNP Silicon
S-L2SB1197KQ LT1G Series
FEATURE
ƽHigh current capacity in compact package.
IC = í0.8A.
3
ƽEpitaxial planar type.
ƽNPN complement: L2SD1781K
1
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
2
SOT– 23 (TO–236AB)
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SB1197KQLT1G
S-L2SB1197KQLT1G
L2SB1197KQLT3G
S-L2SB1197KQLT3G
L2SB1197KRLT1G
S-L2SB1197KRLT1G
L2SB1197KRLT3G
S-L2SB1197KRLT3G
MAXIMUM RATINGS(Ta=25qC)
Marking
AHQ
AHQ
AHR
AHR
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
5
0.8
0.2
150
55 to 150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 40
Collector-emitter breakdown voltage BVCEO 32
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE 120
Transition frequency
fT
Output capacitance
Cob
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
390
200 MHz
12 30 pF
hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
1
BASE
3
COLLECTOR
2
EMITTER
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −4V
IC/IB= −0.5A/ 50mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Rev.O 1/3

L2SB1197KQLT3G
LESHAN RADIO COMPANY, LTD.
L2SB1197KQLT1G Series
S-L2SB1197KQLT1G Series
Rev.O 2/3




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