B3942 D-S MOSFET Datasheet

B3942 Datasheet, PDF, Equivalent


Part Number

B3942

Description

N- and P-Channel 30-V (D-S) MOSFET

Manufacture

BiTEK

Total Page 1 Pages
Datasheet
Download B3942 Datasheet


B3942
B3942
N- and P-Channel 30-V (D-S) MOSFET
General Description
The B3942 is the N- and P-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery
powered circuits where high-side switching and low
in-line power loss are needed in a very small outline
surface mount package.
Features
RDS(ON)=25m@VGS=10V (N-Ch)
RDS(ON)=40m@VGS=4.5V (N-Ch)
RDS(ON)=35m@VGS=-10V (P-Ch)
RDS(ON)=58m@VGS =-4.5V (P-Ch)
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-Resistance and
Maximum DC Current
SOP-8 Package
Pin Configuration
Applications
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted):
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150 )
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA=25
Maximum Power Dissipation
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
RθJC
N-Channel
P-Channel
30 -30
±20 ±20
6.9 -6.1
5.5 -4.9
30 -30
1.7 -1.7
2.0
1.3
-55 to 150
44 30
Unit
V
V
A
A
A
W
/W
Confidential material for authorized user only and BiTEK
reserves the utmost right upon the information contained herein.
1
www.BiTEK.com.tw


Features B3942 N- and P-Channel 30-V (D-S) MOSFET General Description The B3942 is the N- and P-Channel logic enhancement mode power field effect transistors are pro duced using high cell density, DMOS tre nch technology. This high density proce ss is especially tailored to minimize o n-state resistance. These devices are p articularly suited for low voltage appl ication such as cellular phone and note book computer power management and othe r battery powered circuits where high-s ide switching and low in-line power los s are needed in a very small outline su rface mount package. Features RDS(ON)= 25mΩ@VGS=10V (N-Ch) RDS(ON)=40mΩ@VG S=4.5V (N-Ch) RDS(ON)=35mΩ@VGS=-10V ( P-Ch) RDS(ON)=58mΩ@VGS =-4.5V (P-Ch) Super High Density Cell Design for Extr emely Low RDS(ON) Exceptional On-Resist ance and Maximum DC Current SOP-8 Packa ge Pin Configuration Applications Pow er Management in Note book Portable Equ ipment Battery Powered System DC/DC Con verter Load Switch DSC ℃Absolute Maximum Ratings (TA=25 Unless Otherwis.
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