B3942

B3942 N- and P-Channel 30-V (D-S) MOSFET General Description The B3942 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Features RDS(ON)=25mΩ@VGS=10V (N-Ch) RDS(ON)=40mΩ@VGS=4.5V (N-Ch) RDS(ON)=35mΩ@VGS=-10V (P-Ch) RDS(ON)=58mΩ@VGS =-4.5V (P-Ch) Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Pin Configuration Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS PD TJ RθJC N-Channel P-Channel 30 -30 ±20 ±20 6.9 -6.1 5.5 -4.9 30 -30 1.7 -1.7 2.0 1.3 -55 to 150 44 30 Unit V V A A A W ℃ ℃/W Confidential material for authorized...