B3910S

N-Channel 30-V (D-S) MOSFET B3910S General Description The B3910S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration SD SD SD GD Features RDS(ON)=22mΩ@VGS=10V RDS(ON)=26mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS PD TJ RθJC N-Channel 30 ±25 9 7 30 1.7 2.0 1.44 -55 to 150 48 Unit V V A A A W ℃ ℃/W Confidential material for authorized user only and BiTEK reserves the utmost right upon the information contained herein. 3 www.BiTEK.com.tw ...