XN06542 type Transistors Datasheet

XN06542 Datasheet, PDF, Equivalent


Part Number

XN06542

Description

Silicon NPN epitaxial planar type Transistors

Manufacture

Panasonic Semiconductor

Total Page 6 Pages
Datasheet
Download XN06542 Datasheet


XN06542
Composite Transistors
XN06542 (XN6542)
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing (Tr1)
For medium-frequency amplification (Tr2)
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SC1215 + 2SD1360
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Collector-base voltage
(Emitter open)
VCBO
30
Collector-emitter voltage
(Base open)
VCEO
20
Emitter-base voltage
(Collector open)
VEBO
3
Collector current
Tr2 Collector-base voltage
(Emitter open)
IC
VCBO
50
45
Collector-emitter voltage
(Base open)
VCEO
35
Emitter-base voltage
(Collector open)
VEBO
4
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC 50
PT 300
Tj 150
Tstg 55 to +150
Unit
V
V
V
mA
V
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 5Z
Internal Connection
45
6
Tr2 Tr1
321
Publication date: February 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00111BED
1

XN06542
XN06542
Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
Reverse transfer capacitance
(Common base)
Reverse transfer capacitance
(Common emitter)
VCBO
VEBO
VBE
hFE
fT
Crb
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −15 mA, f = 200 MHz
VCE = 6 V, IC = 0, f = 1 MHz
30
3
25
1 000
720
1 300
0.8
250
1 600
V
V
mV
MHz
pF
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.0 1.5
pF
Power gain
GP VCB = 10 V, IE = −1 mA, f = 100 MHz
20
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 45 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
35 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 4 V
Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
10 µA
Forward current transfer ratio
hFE VCB = 10 V, IE = −10 mA
20 50 100
Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 2 mA
0.5 V
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 100 MHz 300 500
MHz
Reverse transfer capacitance
(Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.5 pF
Power gain
GP VCB = 10 V, IE = −10 mA, f = 58 MHz 18
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
2
SJJ00111BED


Features Productnnu 0 to 0.1 1.1–+00..12lifecy cleaen 1.1–+00..13 Composite Transis tors XN06542 (XN6542) Silicon NPN epita xial planar type For high-frequency amp lification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) Features • Two elements incorporat ed into one package • Reduction of th e mounting area and assembly cost by on e half ■ Basic Part Number • 2SC12 15 + 2SD1360 ■ Absolute Maximum Rati ngs Ta = 25°C Parameter Symbol Ratin g Tr1 Collector-base voltage (Emitter open) VCBO 30 Collector-emitter volt age (Base open) VCEO 20 Emitter-base voltage (Collector open) VEBO 3 Col lector current Tr2 Collector-base volta ge (Emitter open) IC VCBO 50 45 Coll ector-emitter voltage (Base open) VCEO 35 Emitter-base voltage (Collector o pen) VEBO 4 Overall Collector curre nt Total power dissipation Junction tem perature Storage temperature IC 50 PT 300 Tj 150 Tstg −55 to +150 Unit V V V mA V V V mA mW °C °C (0.65)dc stage. 1.50–+00..0255e/ 2.8–+00..32 5˚ 0.4±0.2 .
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