RJK0657DPA MOS FET Datasheet

RJK0657DPA Datasheet, PDF, Equivalent


Part Number

RJK0657DPA

Description

N Channel Power MOS FET

Manufacture

Renesas Technology

Total Page 7 Pages
Datasheet
Download RJK0657DPA Datasheet


RJK0657DPA
RJK0657DPA
60V, 20A, 13.6mmax.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
4321
4
G
Preliminary Datasheet
R07DS0343EJ0300
Rev.3.00
Apr 09, 2013
5 678
D DDD
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
60
20
20
80
20
10
7.5
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0343EJ0300 Rev.3.00
Apr 09, 2013
Page 1 of 6

RJK0657DPA
RJK0657DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
V ID = 10 mA, VGS = 0 V
Gate to source leak current
IGSS — — 0.1 A VGS = 20 V, VDS = 0 V
Zero gate voltage drain current
IDSS — — 1 A VDS = 60 V, VGS = 0 V
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
VGS(off)
RDS(on)
|yfs|
2.0
— 4.0
V VDS = 10 V, ID = 1 mA
11 13.6 mID = 10 A, VGS = 10 V Note4
30 —
S ID = 10 A, VDS = 10 V Note4
Input capacitance
Output capacitance
Ciss
Coss
— 1000 —
— 260 —
pF VDS = 10 V, VGS = 0 V,
pF f = 1 MHz
Reverse transfer capacitance
Crss
— 70
— pF
Gate Resistance
Rg
— 2.1 —
Total gate charge
Gate to source charge
Qg — 16 — nC VDD = 25 V, VGS = 10 V,
Qgs — 6.0 — nC ID = 20 A
Gate to drain charge
Qgd — 3.0 — nC
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
— 12 — ns VGS = 10 V, ID = 10 A,
— 10 — ns VDD 30 V, RL = 3 ,
— 31 — ns Rg = 4.7
Fall time
Body–drain diode forward voltage
tf — 9.5 — ns
VDF
— 0.8 1.1
V IF = 20 A, VGS = 0 V Note4
Body–drain diode reverse recovery time trr — 32 — ns IF = 20 A, VGS = 0 V
diF/ dt = 100 A/ s
Notes: 4. Pulse test
R07DS0343EJ0300 Rev.3.00
Apr 09, 2013
Page 2 of 6


Features RJK0657DPA 60V, 20A, 13.6mΩ max. N Cha nnel Power MOS FET High Speed Power Swi tching Features  High speed switchin g  Low drive current  High densit y mounting  Low on-resistance  Pb -free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package nam e: WPAK(3F)) 5678 4321 4 G Prelimina ry Datasheet R07DS0343EJ0300 Rev.3.00 A pr 09, 2013 5 678 D DDD 1, 2, 3 Sourc e 4 Gate 5, 6, 7, 8 Drain S SS 1 23 A bsolute Maximum Ratings Item Drain to s ource voltage Gate to source voltage Dr ain current Drain peak current Body-dra in diode reverse drain current Avalanch e current Avalanche energy Channel diss ipation Channel to case thermal impedan ce Channel temperature Storage temperat ure Notes: 1. PW  10 s, duty cycl e  1% 2. Value at Tch = 25C, Rg 50  3. Tc = 25C Symbol VDSS V GSS ID ID(pulse)Note1 IDR IAP Note 2 EA S Note 2 Pch Note3 ch-c Note3 Tch Ts tg Ratings 60 20 20 80 20 10 7.5 45 2.78 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0343EJ0300 Rev.3.00 A.
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