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RJK03M3DPA Dataheets PDF



Part Number RJK03M3DPA
Manufacturers Renesas Technology
Logo Renesas Technology
Description N Channel Power MOS FET
Datasheet RJK03M3DPA DatasheetRJK03M3DPA Datasheet (PDF)

RJK03M3DPA 30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0767EJ0200 Rev.2.00 Feb 12, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gat.

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RJK03M3DPA 30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0767EJ0200 Rev.2.00 Feb 12, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 40 160 40 15 22.5 35 3.57 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0767EJ0200 Rev.2.00 Feb 12, 2013 Page 1 of 6 RJK03M3DPA Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — — — — Typ — — — — 3.2 3.9 90 2150 335 190 1.85 15.7 6.6 4.5 4.1 3.0 39.3 12.0 0.84 8.0 Max — ± 0.5 1 2.5 3.9 5.1 — 3010 — — 3.7 — — — — — — — 1.09 — Preliminary Unit V A A V m m S pF pF pF  nC nC nC ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 24 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 20 A, VGS = 10 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 40 A VGS = 10 V, ID = 20 A VDD  10 V RL = 0.5  Rg = 4.7  IF = 40 A, VGS = 0 Note4 IF =40 A, VGS = 0 diF/ dt = 500 A/ s R07DS0767EJ0200 Rev.2.00 Feb 12, 2013 Page 2 of 6 Channel Dissipation Pch (W) RJK03M3DPA Main Characteristics Power vs. Temperature Derating 40 30 20 10 Drain Current ID (A) 0 50 100 150 200 Case Temperature Tc (°C) Typical Output Characteristics 50 4.5 V 10 V 40 2.7 V Pulse Test 30 2.6V 20 2.5 V 10 VGS = 2.4 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 Pulse Test 150 100 ID = 20 A 50 10 A 5A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (mV) R07DS0767EJ0200 Rev.2.00 Feb 12, 2013 Drain Current ID (A) Drain Current I.


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