RJK4036DP3-A0 MOS FET Datasheet

RJK4036DP3-A0 Datasheet, PDF, Equivalent


Part Number

RJK4036DP3-A0

Description

High Speed Power Switching MOS FET

Manufacture

Renesas

Total Page 4 Pages
Datasheet
Download RJK4036DP3-A0 Datasheet


RJK4036DP3-A0
RJK4036DP3-A0
400V - 3A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0004ZB-A
Package name: SOT-223
4
3
2
1
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
VGSS
IDNote1
ID
Note2
(pulse)
IDR Note1
IDR
Note2
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Limited by Tch max.. Value at Tc = 25C
2. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0838EJ0100
Rev.1.00
Jul 05, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
400
±30
3
6
3
6
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
C
C
R07DS0838EJ0100 Rev.1.00
Jul 05, 2011
Page 1 of 3

RJK4036DP3-A0
RJK4036DP3-A0
Preliminary
Electrical Characteristics
Item
Symbol Min Typ Max Unit
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
V(BR)DSS
400
—V
IDSS
1 A
IGSS — — ±0.1 A
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS(off)
3.0
4.5 V
RDS(on)
2.4
2.9
Input capacitance
Ciss — 165 — pF
Output capacitance
Coss
25
— pF
Reverse transfer capacitance
Crss
3.5
— pF
Turn-on delay time
td(on)
11
— ns
Rise time
tr — 12 — ns
Turn-off delay time
td(off)
21
— ns
Fall time
tf — 17 — ns
Body-drain diode forward voltage
VDF — 0.9 1.5 V
Notes: 3. Pulse test
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 400 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 1.5 A, VGS = 10 V Note3
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 1.5 A
VGS = 10 V
RL = 133
Rg = 10
IF = 3 A, VGS = 0 Note3
R07DS0838EJ0100 Rev.1.00
Jul 05, 2011
Page 2 of 3


Features RJK4036DP3-A0 400V - 3A - MOS FET High S peed Power Switching Features  Low o n-resistance RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current  High density m ounting Outline RENESAS Package code: P RSP0004ZB-A Package name: SOT-223 4 3 2 1 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current D rain peak current Body-drain diode reve rse drain current Body-drain diode reve rse drain peak current VGSS IDNote1 ID Note2 (pulse) IDR Note1 IDR Note 2 (pulse) Channel temperature Tch St orage temperature Tstg Notes: 1. Limi ted by Tch max.. Value at Tc = 25C 2. Pulse width limited by safe operatin g area. Preliminary Datasheet R07DS083 8EJ0100 Rev.1.00 Jul 05, 2011 D 1. Gat e 2. Drain 3. Source 4. Drain S Rating s 400 ±30 3 6 3 6 150 –55 to +150 ( Ta = 25°C) Unit V V A A A A C C R07DS0838EJ0100 Rev.1.00 Jul 05, 2011 Page 1 of 3 RJK4036DP3-A0 Preliminary Electrical Characteristics Item Symbol .
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