UPA2810 EFFECT TRANSISTOR Datasheet

UPA2810 Datasheet, PDF, Equivalent


Part Number

UPA2810

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

Renesas

Total Page 5 Pages
Datasheet
Download UPA2810 Datasheet


UPA2810
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2810
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power
management applications of portable equipments.
FEATURES
Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 6.5 A)
Built-in gate protection diode
Thin type surface mount package with heat spreader
RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are
connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS 30 V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
VGSS
ID(DC)
ID(pulse)
PT1
PT2
m20
m13
m78
1.5
3.8
V
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
55 to +150
°C
IAS 13 A
EAS
16.9
mJ
PACKAGE DRAWING (Unit: mm)
1
2
8
7
36
5
4
3.3±0.15
3.0±0.1
0.10 S
0.35
0.2
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
0.4±0.1
0.4±0.1
1.75±0.1
EQUIVALENT CIRCUIT
Drain
THERMAL RESISTANCE
Channel to Ambient Thermal Resistance Note2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19290EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008

UPA2810
μ PA2810
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 30 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 6.5 A
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 6.5 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 6.5 A,
VGS = 10 V,
RG = 10 Ω
VDD = 24 V,
VGS = 10 V,
ID = 13 A
IF = 13 A, VGS = 0 V
IF = 13 A, VGS = 0 V,
di/dt = 100 A/μs
1.0
7
Note Pulsed
TYP.
9.5
15
1860
400
300
11
19
160
100
40
6
14
0.87
50
40
MAX.
1
m10
2.5
12
23
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = 20 0 V
50 Ω
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
VDS()
90%
VDS
VDS
Wave Form 0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet G19290EJ1V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2810 SWITCHING P-CHANNEL POWER MOSF ET DESCRIPTION The μ PA2810 is P-chan nel MOSFET designed for DC/DC converter and power management applications of p ortable equipments. FEATURES • Low o n-state resistance RDS(on)1 = 12 mΩ MA X. (VGS = −10 V, ID = −13 A) RDS(on )2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) • Built-in gate protection diode • Thin type surface mount packa ge with heat spreader • RoHS Complian t ABSOLUTE MAXIMUM RATINGS (TA = 25°C , All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS − 30 V Gate to Source Voltage (VDS = 0 V ) Drain Current (DC) Drain Current (pul se) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2 VGSS ID(DC) ID(pulse) PT1 PT2 m 20 m13 m78 1.5 3.8 V A A W W Channel Temperature Tch 150 °C Storage Tempe rature Single Avalanche Current Note3 S ingle Avalanche Energy Note3 Tstg − 55 to +150 °C IAS −13 A EAS 16.9 mJ PACKAGE DRAWING (Unit: mm) 0.65 +0.050 –0 0.2.
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