IRFR540ZPbF Power MOSFET Datasheet

IRFR540ZPbF Datasheet, PDF, Equivalent


Part Number

IRFR540ZPbF

Description

HEXFET Power MOSFET

Manufacture

International Rectifier

Total Page 11 Pages
Datasheet
Download IRFR540ZPbF Datasheet


IRFR540ZPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Halogen-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
ijRθJA
jRθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
PD - 96141B
IRFR540ZPbF
IRFU540ZPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 28.5m
S ID = 35A
D-Pak
I-Pak
IRFR540ZPbF IRFU540ZPbF
Max.
35
25
140
91
0.61
± 20
39
75
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.64
40
110
Units
°C/W
1
09/30/10

IRFR540ZPbF
IRFR/U540ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
100 ––– ––– V VGS = 0V, ID = 250µA
e––– 0.092 ––– V/°C Reference to 25°C, ID = 1mA
––– 22.5 28.5 mVGS = 10V, ID = 21A
2.0 ––– 4.0
V VDS = VGS, ID = 50µA
28 ––– ––– S VDS = 25V, ID = 21A
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 39 59
ID = 21A
e––– 11 ––– nC VDS = 50V
––– 12 –––
VGS = 10V
––– 14 –––
VDD = 50V
––– 42 –––
ID = 21A
e––– 43 ––– ns RG = 13
––– 34 –––
VGS = 10V
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1690 –––
––– 180 –––
––– 100 –––
––– 720 –––
––– 110 –––
––– 190 –––
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 35
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 140
A showing the
integral reverse
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 21A, VGS = 0V
e––– 32 48 ns TJ = 25°C, IF = 21A, VDD = 50V
––– 40 60 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Features Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Opera ting Temperature l Fast Switching l Rep etitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description T his HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico n area. Additional features of this des ign are a 175°C junction operating tem perature, fast switching speed and impr oved repetitive avalanche rating. These features combine to make this design a n extremely efficient and reliable devi ce for use in a wide variety of applica tions. G Absolute Maximum Ratings Pa rameter ID @ TC = 25°C Continuous Drai n Current, VGS @ 10V (Silicon Limited) ™ID @ TC = 100°C Continuous Drain Cur rent, VGS @ 10V (Silicon Limited) IDM P ulsed Drain Current PD @TC = 25°C Powe r Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Therma lly limited) Single Pulse Avalanche Ene rgy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÙIAR Av.
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