DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4091
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4091 is N-channel M...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK4091
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES Low on-state resistance
RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Low gate to drain charge QGD = 2.2 nC TYP. (VDD = 15 V, ID = 30 A) 4.5 V drive available Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SK4091(1)-S27-AY Note 2SK4091-ZK-E1-AY Note 2SK4091-ZK-E2-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube 75 p/tube
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg IAS EAS
30 ±20 ±30 ±110 21 1.0 150 −55 to +150 18 32.4
V V A A W W °C °C A mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-251) (TO-252)
The ...