IRF7807VD2PbF SCHOTTKY DIODE Datasheet

IRF7807VD2PbF Datasheet, PDF, Equivalent


Part Number

IRF7807VD2PbF

Description

MOSFET / SCHOTTKY DIODE

Manufacture

International Rectifier

Total Page 9 Pages
Datasheet
Download IRF7807VD2PbF Datasheet


IRF7807VD2PbF
PD-95291
IRF7807VD2PbF
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
A/S 1
8 K/D
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
A/S 2
A/S 3
7 K/D
6 K/D
• Low Vf Schottky Rectifier
• Lead-Free
G4
5 K/D
D
Description
SO-8
Top View
The FETKYfamily of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
DEVICE CHARACTERISTICS…
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
RDS(on)
Q
G
Qsw
Qoss
IRF7807VD2
17m
9.5nC
3.4nC
12nC
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS 4.5V)
Pulsed Drain Current
70°C
Power Dissipationƒ
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent„
70°C
Junction & Storage Temperature Range
Symbol
V
DS
VGS
ID
IDM
PD
IF (AV)
TJ, TSTG
Max.
30
±20
8.3
6.6
66
2.5
1.6
3.7
2.3
–55 to 150
Units
V
A
W
A
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
www.irf.com
RθJA
RθJL
Max.
50
20
Units
°C/W
°C/W
1
10/08/04

IRF7807VD2PbF
IRF7807VD2PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
CCuurrrreennt t*
RDS(on)
VGS(th)
IDSS
Min Typ
30 –
17
1.0
Max Units
–V
25 m
V
50 µA
6.0 mA
Gate-Source Leakage
Current*
Total Gate Charge*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
IGSS
QG
QGS1
QGS2
QGD
Qsw
Qoss
RG
td (on)
tr
td (off)
tf
±100 nA
9.5 14
2.3
1.0 nC
2.4
3.4 5.2
12 16.8
2.0
6.3
1.2
11
2.2
ns
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A‚
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
VDS = 24V, VGS = 0,
Tj = 100°C
VGS = ±20V
VGS=4.5V, ID=7.0A
VDS = 16V
VDS = 16V, VGS = 0
VDD = 16V, ID = 7.0A
VGS = 5V, RG= 2
Resistive Load
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
Conditions
VSD
0.54
V Tj = 25°C, Is = 3.0A, VGS =0V‚
0.43
Tj = 125°C, Is = 3.0A, VGS =0V‚
trr 36 ns T = 25°C, I = 7.0A, V = 16V
js
DS
Qrr 41 nC di/dt = 100A/µs
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: 
‚
ƒ
„
…
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400 µs; duty cycle 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
Typical
values
of
RDS(on)
measured
at
V
GS
=
4.5V,
Q,
G
Q
SW
and
Q
OSS
measured at VGS = 5.0V, IF = 7.0A.
Device are 100% tested to these parameters.
2
www.irf.com


Features PD-95291 IRF7807VD2PbF FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET® Power MOSFET and Schottky Dio de • Ideal for Synchronous Rectifiers in DC-DC A/S 1 8 K/D Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses A/S 2 A/S 3 7 K/D 6 K/D • Low Vf Schottky Rectif ier • Lead-Free G4 5 K/D D Descrip tion SO-8 Top View The FETKY™ fami ly of Co-Pack HEXFET®MOSFETs and Scho ttky diodes offers the designer an inno vative, board space saving solution fo r switching regulator and power manage ment applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve DEVICE CHARACTERISTICS… extremely low on-resistance per silicon area. Combining this technology with I nternational Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable elec tronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The .
Keywords IRF7807VD2PbF, datasheet, pdf, International Rectifier, MOSFET, /, SCHOTTKY, DIODE, RF7807VD2PbF, F7807VD2PbF, 7807VD2PbF, IRF7807VD2Pb, IRF7807VD2P, IRF7807VD2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)