GT3401

YGMOS Technology Crop. 30V P-Channel Enhancement-Mode MOSFET 30V P MOS GT3401 Data Sheet VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 60mΩ RDS(ON), [email protected], [email protected] = 75mΩ RDS(ON), [email protected], [email protected] = 120mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D D A16T 3401 SOT-23(PACKAGE) GS GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS -30 V VGS ±12 Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25oC TA = 75oC Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) ID IDM PD TJ, Tstg RθJA -4.2 -30 1.4 1 -55 to 150 125 A W oC oC/W -1- GT3401 YGMOS Technology Crop. Data Sheet ELECTRICAL CHARACTERISTICS Parameter Test Condition Static Drain-Source Breakdown Voltage BVDSS Drain-Source On-State Resistance RDS(on) Drain-Source On-State Resistance RDS(on) Drain-Source On-State Resistance RDS(on) Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate Body Leakage IGSS Forward Transconductance gfs Dynamic VGS = 0V, ID = -250uA ...