2SA1955FV Type Transistor Datasheet

2SA1955FV Datasheet, PDF, Equivalent


Part Number

2SA1955FV

Description

Silicon PNP Epitaxial Type Transistor

Manufacture

Toshiba

Total Page 5 Pages
Datasheet
Download 2SA1955FV Datasheet


2SA1955FV
2SA1955FV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955FV
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
1.2±0.05
0.8±0.05
1
23
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
15
12
5
400
50
150 *
150
55~150
V
V
V
mA
mA
mW
°C
°C
VESM
JEDEC
JEITA
1.BASE
2.EMITTER
3.COLLECTOR
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-1L1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
1 2007-11-01

2SA1955FV
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
Symbol
Test Condition
ICBO
VCB = −15 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −2 V, IC = −10 mA
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
IC = −10 mA, IB = −0.5 mA
IC = −200 mA, IB = −10 mA
IC = −200 mA, IB = −10 mA
fT VCE = −2 V, IC = −10 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
Ron IB = −1 mA, Vin = −1 Vrms, f = 1 kHz
Turn-on time
ton
2SA1955FV
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
300 1000
⎯ −15 30
mV
⎯ −110 250
⎯ −0.87 1.2
V
80 130 MHz
4.2 pF
0.9
Ω
40
Switching time Storage time
tstg
280
ns
Fall time
tf
IB1 = −IB2 = 5 mA
Note: hFE classification A: 300~600, B: 500~1000
45
2 2007-11-01


Features 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Application s Switching and Muting Switch Applicati on • Low saturation voltage: VCE (sat ) (1) = −15 mV (typ.) @IC = −10 mA/ IB = −0.5 mA • Large collector curr ent: IC = −400 mA (max) Absolute Maxi mum Ratings (Ta = 25°C) 1.2±0.05 0.8 ±0.05 0.4 0.4 0.22±0.05 Unit: mm 1. 2±0.05 0.8±0.05 1 23 0.32±0.05 Cha racteristics Symbol Rating Unit 0.1 3±0.05 0.5±0.05 Collector-base volt age Collector-emitter voltage Emitter-b ase voltage Collector current Base curr ent Collector power dissipation Junctio n temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −1 5 −12 −5 −400 −50 150 * 150 − 55~150 V V V mA mA mW °C °C VESM JE DEC JEITA 1.BASE 2.EMITTER 3.COLLECTOR ― ― Note: Using continuously unde r heavy loads (e.g. the application of high TOSHIBA 2-1L1A temperature/curr ent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the.
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