Silicon Transistor. 2SA1965-S Datasheet


2SA1965-S Transistor. Datasheet pdf. Equivalent


2SA1965-S


PNP Epitaxial Planar Silicon Transistor
Ordering number : ENA1085

2SA1965-S
SANYO Semiconductors
DATA SHEET

2SA1965-S PNP Epitaxial Planar Silicon Transistor
Muting Circuit Applications
Features
• Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

Specifications
Absolute Maximum Ratings at Ta=25°C

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature

Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg

Electrical Characteristics at Ta=25°C

Conditions

Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : KA

Symbol
ICBO IEBO hFE
fT Cob

Conditions
VCB=--12V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--5mA VCE=--5V, IC=--10mA VCB=--10V, f=1MHz

Ratings --15 --10 --5
--100 --200
--20 150 150 --55 to +150

Unit V V V mA mA mA
mW °C °C

min 200

Ratings typ

max

Unit

--0.1 μA

--0.1 μA

600

600 MHz

5.0 pF

Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industria...



2SA1965-S
Ordering number : ENA1085
2SA1965-S
SANYO Semiconductors
DATA SHEET
2SA1965-S PNP Epitaxial Planar Silicon Transistor
Muting Circuit Applications
Features
Ultrasmall-sized package permitting applied sets to be made small and slim.
Small output capacitance.
Low collector-to-emitter saturation voltage.
Low ON resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : KA
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=--12V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--5mA
VCE=--5V, IC=--10mA
VCB=--10V, f=1MHz
Ratings
--15
--10
--5
--100
--200
--20
150
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
min
200
Ratings
typ
max
Unit
--0.1 μA
--0.1 μA
600
600 MHz
5.0 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70208LA TI IM TC-00001495 No. A1085-1/4
Downloaded from Elcodis.com electronic components distributor

2SA1965-S
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
On Resistance
2SA1965-S
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Ron
IC=--10mA, IB=--1mA
IC=--10mA, IB=--1mA
IC=--10μA, IE=0A
IC=--1mA, RBE=
IE=--10μA, IC=0A
IB=--3mA, f=1MHz
Package Dimensions
unit : mm (typ)
7029-002
Top View
1.4
0.25
3
12
0.2
0.45
0.1
12
3
Bottom View
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
min
--15
--10
--5
Ratings
typ
--16
--0.75
1.2
max
--35
--1.1
Unit
mV
V
V
V
V
Ω
--100
--80
--60
--40
--20
0
0
--350μA
--450μA
--400μA
IC -- VCE
--300μA
--250μA
--200μA
--150μA
--100μA
--50μA
IB=0μA
--0.4 --0.8 --1.2 --1.6 --2.0
Collector-to-Emitter Voltage, VCE -- V ITR05035
Downloaded from Elcodis.com electronic components distributor
IC -- VCE
--10
--20μA
--8 --18μA
--16μA
--14μA
--6 --12μA
--10μA
--4 --8μA
--6μA
--2 --4μA
--2μA
0 IB=0μA
0 --1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V ITR05036
No. A1085-2/4




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