MOSFET. 6R190C6 Datasheet


6R190C6 MOSFET. Datasheet pdf. Equivalent


Part Number

6R190C6

Description

MOSFET

Manufacture

Infineon Technologies

Total Page 19 Pages
Datasheet
Download 6R190C6 Datasheet


6R190C6
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor
IPx60R190C6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket

6R190C6
600V CoolMOS" C6 Power Transistor
1 Description
CoolMOS" is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS" C6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.19
63
59
5.2
500
V
!
nC
A
µJ
A/µs
IPA60R190C6, IPB60R190C6
IPI60R190C6, IPP60R190C6
IPW60R190C6
drain
pin 2
gate
pin 1
source
pin 3
Type / Ordering Code
IPW60R190C6
IPB60R190C6
IPI60R190C6
IPP60R190C6
IPA60R190C6
Package
PG-TO247
PG-TO263
PG-TO262
PG-TO220
PG-TO220 FullPAK
Marking
6R190C6
Related Links
IFX C6 Product Brief
IFX C6 Portfolio
IFX CoolMOS Webpage
IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.2, 2014-12-02


Features MOSFET MetalOxideSemiconductorFieldE ffectTransistor CoolMOS™C6600V 600 VCoolMOS™C6PowerTransistor IPx60R 190C6 DataSheet Rev.2.2 Final PowerM anagement&Multimarket 600V CoolMOS" C6 Power Transistor 1 Description Cool MOS" is a revolutionary technology for high voltage power MOSFETs, designed ac cording to the superjunction (SJ) princ iple and pioneered by Infineon Technolo gies. CoolMOS" C6 series combines the e xperience of the leading SJ MOSFET supp lier with high class innovation. The of fered devices provide all benefits of a fast switching SJ MOSFET while not sac rificing ease of use. Extremely low swi tching and conduction losses make switc hing applications even more efficient, more compact, lighter, and cooler. Feat ures • Extremely low losses due to ve ry low FOM Rdson*Qg and Eoss • Very h igh commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-fre e plating, Halogen free Applications PF C stages, hard switching PWM stages and resonant switching PWM stages for e.
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