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MIP2E1D

Matsushita

High-Performance IPD for Battery Chaegers

I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20...


Matsushita

MIP2E1D

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Description
I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 IPD I MIP2E1D MIP2E2D MIP2E3D MIP2E4D MIP2E5D MIP2E7D ∼7W ∼ 10 W 10 W ∼ 20 W 15 W ∼ 30 W 20 W ∼ 40 W 40 W ∼ 60 W VDSS 700 V MOS FET ILIMIT fOSC 0.4 A 0.5 A 1.0 A 1.5 A TO-220-A1/ DIP8-A1(CF) 100 kHz 2.0 A TO-220-A1 3.0 A IPD MIP0222 MIP0223 MIP0224 MIP0225 MIP0227 I LINE L1 10 mH 1A NTRL C1 0.1 µF 250 VAC CSB 0.0 1µF D2 630 V CIN BR1 120 µF 600 V 400 V 1.5 A DSB IC1 MIP2E R3 C6 33 Ω 390 pF 0.5W 500 V L2 10 µH 4A RSB 100 kΩ 2W D2 200 V, 5 A COUT1 470 µF 25 V R4 47 Ω PC1 R5 2.2 kΩ R7 39 kΩ COUT2 180 µF 25 V CT 47 µF C2 R1 0.1 µF 6.2 Ω T1 PC D1 CNC1S101 (ON3131) R2 6.2 Ω C3 1 µF C4 C5 2200 pF 2200 pF 250 VAC 250 VAC R6 10 kΩ IC AN1431 C7 0.1µF R8 10 kΩ 12 V/3 A RETURN 617-8520 M00372CJ TEL (075) 951-8151 ( ) http://www.panasonic.co.jp/semicon/ η (%) Pin (W) I 100 80 60 40 2 0 0 ( 12 V/3 A η vs PO MIP2E5D MIP2E5D MIP0225 ( MIP0225 ( 100 V 264 V ) 100 V ) 264 V 5 10 15 20 25 30 35 40 PO (W) ) 3 2.5 2 1.5 1 0.5 0 0 0.5 Pin vs PO MIP2E5D MIP2E5D MIP0225 ( MIP0225 ( 100 V 264 V ) 100 V ) 264 V 1 1.5 2 2.5 3 PO (W) 100 VAC 0.3 W 30 W 264 VAC 0.3 W 30 W I ( : mm) DIP8-A1(CF) 9.4±0.3 87 5 0.25+–00..1005 MIP2E5D  69.8 83.1  60.0 84.3 (%) MIP0225(  42.9 83.8  24.6 84.0 MIP2E5D 0.07 0.43 36.1 0.12 0.5 35.6 (W) MIP0225( 0.35 0.7 35.8 1.08 1.22 35.7 ...




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