FDPF770N15A PowerTrench MOSFET Datasheet

FDPF770N15A Datasheet, PDF, Equivalent


Part Number

FDPF770N15A

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
Datasheet
Download FDPF770N15A Datasheet


FDPF770N15A
March 2015
FDPF770N15A
N-Channel PowerTrench® MOSFET
150 V, 10 A, 77 mΩ
Features
• RDS(on) = 60 mΩ (Typ.) @ VGS = 10 V, ID = 10 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Uninterruptible Power Supply
• Micro Solar Inverter
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
(f > 1 Hz)
- Continuous (TC = 25oC,Silicon Limited)
- Continuous (TC = 100oC,Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF770N15A
150
±20
±30
10
7
40
35
6.0
21
0.17
-55 to +150
300
FDPF770N15A
5.9
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDPF770N15A Rev. 1.4
1
www.fairchildsemi.com

FDPF770N15A
Package Marking and Ordering Information
Part Number
FDPF770N15A
Top Mark
FDPF770N15A
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 75 V, VGS = 0 V,
f = 1 MHz
VDS = 75 V, VGS = 0 V
VDS = 75 V,ID = 10 A,
VGS = 10 V
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
60
15
575
64
3.9
113
8.6
3.2
1.2
1.9
0.5
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
77 mΩ
-S
765 pF
85 pF
- pF
- pF
11.2 nC
- nC
- nC
- nC
-Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 75 V, ID = 10 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A,VDD = 75 V,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25°C, L = 3 mH, ISD = 4.8 A.
3. ISD 10 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
12 34 ns
8 26 ns
15 40 ns
3 16 ns
- 10 A
- 40 A
- 1.25 V
59 - ns
124 - nC
©2011 Fairchild Semiconductor Corporation
FDPF770N15A Rev. 1.4
2
www.fairchildsemi.com


Features FDPF770N15A — N-Channel PowerTrench® MOSFET March 2015 FDPF770N15A N-Chann el PowerTrench® MOSFET 150 V, 10 A, 77 mΩ Features • RDS(on) = 60 mΩ (Ty p.) @ VGS = 10 V, ID = 10 A • Fast Sw itching Speed • Low Gate Charge • H igh Performance Trench Technology for E xtremely Low RDS(on) • High Power and Current Handling Capability • RoHS C ompliant Description This N-Channel MO SFET is produced using Fairchild Semico nductor’s advanced PowerTrench® proc ess that has been tailored to minimize the on-state resistance while maintaini ng superior switching performance. Appl ications • Consumer Appliances • LE D TV • Synchronous Rectification for ATX / Sever / Telecom PSU • Uninterru ptible Power Supply • Micro Solar Inv erter D GDS TO-220F G S Absolute Ma ximum Ratings TC = 25oC unless otherwis e noted. Symbol VDSS VGSS ID IDM EAS d v/dt PD TJ, TSTG TL Parameter Drain t o Source Voltage Gate to Source Voltag e Drain Current Drain Current - DC - AC (f > 1 Hz) - Continuous (TC = 25oC,Silicon Limited.
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