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FDPF770N15A Dataheets PDF



Part Number FDPF770N15A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDPF770N15A DatasheetFDPF770N15A Datasheet (PDF)

FDPF770N15A — N-Channel PowerTrench® MOSFET March 2015 FDPF770N15A N-Channel PowerTrench® MOSFET 150 V, 10 A, 77 mΩ Features • RDS(on) = 60 mΩ (Typ.) @ VGS = 10 V, ID = 10 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state .

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FDPF770N15A — N-Channel PowerTrench® MOSFET March 2015 FDPF770N15A N-Channel PowerTrench® MOSFET 150 V, 10 A, 77 mΩ Features • RDS(on) = 60 mΩ (Typ.) @ VGS = 10 V, ID = 10 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Consumer Appliances • LED TV • Synchronous Rectification for ATX / Sever / Telecom PSU • Uninterruptible Power Supply • Micro Solar Inverter D GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC (f > 1 Hz) - Continuous (TC = 25oC,Silicon Limited) - Continuous (TC = 100oC,Silicon Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDPF770N15A 150 ±20 ±30 10 7 40 35 6.0 21 0.17 -55 to +150 300 FDPF770N15A 5.9 62.5 Unit V V A A mJ V/ns W W/oC oC oC Unit oC/W ©2011 Fairchild Semiconductor Corporation FDPF770N15A Rev. 1.4 1 www.fairchildsemi.com FDPF770N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Part Number FDPF770N15A Top Mark FDPF770N15A Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 120 V, VGS = 0 V VDS = 120 V, TC = 125oC VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 μA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Dynamic Characteristics Ciss Coss Crss Coss(er) Qg(tot) Qgs Qgs2 Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Energy Related Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S) VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 0 V VDS = 75 V,ID = 10 A, VGS = 10 V f = 1 MHz (Note 4) Min. 150 - 2.0 - - - - Typ. 0.1 - 60 15 575 64 3.9 113 8.6 3.2 1.2 1.9 0.5 Max. Unit - - 1 500 ±100 V V/oC μA nA 4.0 V 77 mΩ -S 765 pF 85 pF - pF - pF 11.2 nC - nC - nC - nC -Ω Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 75 V, ID = 10 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A,VDD = 75 V, dIF/dt = 100 A/μs Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. Starting TJ = 25°C, L = 3 mH, ISD = 4.8 A. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. - - 12 34 ns 8 26 ns 15 40 ns 3 16 ns - 10 A - 40 A - 1.25 V 59 - ns 124 - nC ©2011 Fairchild Semiconductor Corporation FDPF770N15A Rev. 1.4 2 www.fairchildsemi.com FDPF770N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 10 5.5V ID, Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance 1 0.5 0.1 *Notes: 1. 250μs Pulse Test 2. TC = 25oC 1 VDS, Drain-Source Voltage[V] 7 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.10 0.09 0.08 VGS = 10V 0.07 0.06 VGS = 20V 0.05 0 *Note: TC = 25oC 10 20 30 ID, Drain Current [A] 40 50 Figure 5. Capacitance Characteristics 1000 Ciss 100 Coss *Note: 10 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10.1 1 10 VDS, Drain-Source Voltage [V] Crss 100 200 Capacitances [pF] IS, Reverse Drain Current [A] VGS, Gate-Source Voltage [V] ID, Drain Current[A] Figure 2. Transfer Characteristics 50 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 10 150oC 25oC -55oC 1.


IRF8113GPbF FDPF770N15A RJK03P7DPA


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