Document
FDPF770N15A — N-Channel PowerTrench® MOSFET
March 2015
FDPF770N15A
N-Channel PowerTrench® MOSFET
150 V, 10 A, 77 mΩ
Features
• RDS(on) = 60 mΩ (Typ.) @ VGS = 10 V, ID = 10 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Consumer Appliances • LED TV • Synchronous Rectification for ATX / Sever / Telecom PSU • Uninterruptible Power Supply • Micro Solar Inverter
D
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Drain Current
- DC
- AC
(f > 1 Hz)
- Continuous (TC = 25oC,Silicon Limited) - Continuous (TC = 100oC,Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
FDPF770N15A 150 ±20 ±30 10 7 40 35 6.0 21 0.17
-55 to +150 300
FDPF770N15A 5.9 62.5
Unit V
V
A
A mJ V/ns W W/oC oC oC
Unit oC/W
©2011 Fairchild Semiconductor Corporation FDPF770N15A Rev. 1.4
1
www.fairchildsemi.com
FDPF770N15A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDPF770N15A
Top Mark FDPF770N15A
Package TO-220F
Packing Method Tube
Reel Size N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS ΔBVDSS / ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC
VDS = 120 V, VGS = 0 V VDS = 120 V, TC = 125oC VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th) RDS(on) gFS
Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance
VGS = VDS, ID = 250 μA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A
Dynamic Characteristics
Ciss Coss Crss Coss(er) Qg(tot) Qgs Qgs2 Qgd ESR
Input Capacitance Output Capacitance Reverse Transfer Capacitance Energy Related Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S)
VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 0 V VDS = 75 V,ID = 10 A, VGS = 10 V f = 1 MHz
(Note 4)
Min.
150 -
2.0 -
-
-
-
Typ.
0.1
-
60 15
575 64 3.9 113 8.6 3.2 1.2 1.9 0.5
Max. Unit
-
-
1 500 ±100
V V/oC
μA nA
4.0 V 77 mΩ -S
765 pF 85 pF - pF - pF 11.2 nC - nC - nC - nC -Ω
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 75 V, ID = 10 A, VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A,VDD = 75 V, dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25°C, L = 3 mH, ISD = 4.8 A. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
-
-
12 34 ns 8 26 ns 15 40 ns 3 16 ns
- 10 A - 40 A - 1.25 V 59 - ns 124 - nC
©2011 Fairchild Semiconductor Corporation FDPF770N15A Rev. 1.4
2
www.fairchildsemi.com
FDPF770N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V
10 5.5V
ID, Drain Current[A]
RDS(ON) [Ω], Drain-Source On-Resistance
1 0.5
0.1
*Notes: 1. 250μs Pulse Test 2. TC = 25oC
1 VDS, Drain-Source Voltage[V]
7
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.10
0.09
0.08
VGS = 10V
0.07
0.06
VGS = 20V
0.05 0
*Note: TC = 25oC
10 20 30 ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
1000
Ciss
100 Coss
*Note: 10 1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10.1 1 10 VDS, Drain-Source Voltage [V]
Crss 100 200
Capacitances [pF]
IS, Reverse Drain Current [A]
VGS, Gate-Source Voltage [V]
ID, Drain Current[A]
Figure 2. Transfer Characteristics
50 *Notes: 1. VDS = 10V 2. 250μs Pulse Test
10
150oC
25oC
-55oC
1.