HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
C...
Description
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
PD - 95442A
IRFR3704ZPbF
IRFU3704ZPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 8.4m
9.3nC
D-Pak IRFR3704Z
I-Pak IRFU3704Z
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes through
are on page 11 www.irf.com
Max. 20 ± 20
60f 42f
240 48 24 0.32 -55 to + 175
300 (1.6mm from case)
Typ. ––– ––– –––
Max. 3.1 50 110
Units V A
W W/°C
°C
Units °C/W
1
12/03/04
IRFR/U3704ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
Gate Threshold Voltage Gate Th...
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