Power MOSFET. IRFR3704ZPbF Datasheet


IRFR3704ZPbF MOSFET. Datasheet pdf. Equivalent


Part Number

IRFR3704ZPbF

Description

HEXFET Power MOSFET

Manufacture

International Rectifier

Total Page 12 Pages
Datasheet
Download IRFR3704ZPbF Datasheet


IRFR3704ZPbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 95442A
IRFR3704ZPbF
IRFU3704ZPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 8.4m
9.3nC
D-Pak
IRFR3704Z
I-Pak
IRFU3704Z
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
Max.
20
± 20
60f
42f
240
48
24
0.32
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/03/04

IRFR3704ZPbF
IRFR/U3704ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
e––– 6.7 8.4 mVGS = 10V, ID = 15A
––– 9.2 11.4
eVGS = 4.5V, ID = 12A
1.65 2.1 2.55 V VDS = VGS, ID = 250µA
––– -5.5 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS =16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
41 ––– –––
––– 9.3 14
S VDS = 10V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 3.0 –––
VDS = 10V
––– 1.1 ––– nC VGS = 4.5V
––– 2.7 –––
ID = 12A
––– 2.5 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 3.8 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 5.6 ––– nC VDS = 10V, VGS = 0V
––– 41 –––
eVDD = 10V, VGS = 4.5V
––– 8.9 –––
ID = 12A
––– 4.9 ––– ns Clamped Inductive Load
tf Fall Time
––– 12 –––
Ciss Input Capacitance
––– 1190 –––
VGS = 0V
Coss Output Capacitance
––– 380 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 170 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
41
12
4.8
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
fMin. Typ. Max. Units
Conditions
––– ––– 60
MOSFET symbol
D
––– ––– 240
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
e––– 13 19 ns TJ = 25°C, IF = 12A, VDD = 10V
––– 4.2 6.3 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Features Applications l High Frequency Synchronou s Buck Converters for Computer Processo r Power l High Frequency Isolated DC-DC Converters with Synchronous Rectificat ion for Telecom and Industrial Use l Le ad-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l F ully Characterized Avalanche Voltage an d Current PD - 95442A IRFR3704ZPbF IR FU3704ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 8.4m 9.3nC D-Pa k IRFR3704Z I-Pak IRFU3704Z Absolute Maximum Ratings Parameter VDS Drain-t o-Source Voltage VGS ID @ TC = 25°C I D @ TC = 100°C IDM Gate-to-Source Vol tage Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C M aximum Power Dissipation PD @TC = 100 C Maximum Power Dissipation Linear De rating Factor TJ TSTG Operating Junct ion and Storage Temperature Range Sold ering Temperature, for 10 seconds Ther mal Resistance Parameter RθJC Junct ion-to-Case gÃRθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-.
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