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IRFR3704ZPbF

International Rectifier

HEXFET Power MOSFET

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC C...


International Rectifier

IRFR3704ZPbF

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Description
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current PD - 95442A IRFR3704ZPbF IRFU3704ZPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :20V 8.4m 9.3nC D-Pak IRFR3704Z I-Pak IRFU3704Z Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ™Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case gÃRθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes  through … are on page 11 www.irf.com Max. 20 ± 20 60f 42f 240 48 24 0.32 -55 to + 175 300 (1.6mm from case) Typ. ––– ––– ––– Max. 3.1 50 110 Units V A W W/°C °C Units °C/W 1 12/03/04 IRFR/U3704ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Th...




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