UPA2735GR P-channel MOSFET Datasheet

UPA2735GR Datasheet, PDF, Equivalent


Part Number

UPA2735GR

Description

P-channel MOSFET

Manufacture

Renesas

Total Page 8 Pages
Datasheet
Download UPA2735GR Datasheet


UPA2735GR
Data Sheet
μPA2735GR
P-channel MOSFET
–30 V, –16 A, 5.0 mΩ
R07DS0867EJ0100
Rev.1.00
Aug 28, 2012
Description
The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 16 A)
4.5 V Gate-drive available
Small and surface mount package (Power SOP8)
Pb-free and Halogen free
Power SOP8
Ordering Information
Part No.
μ PA2735GR-E1-AT
μ PA2735GR-E2-AT
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
30
m20
m16
m150
1.1
2.5
150
55 to +150
16
25.6
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
114
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 1 of 6

UPA2735GR
μPA2735GR
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.0
10
TYP.
3.8
5.1
6250
3900
2850
35
85
300
400
195
15
100
0.82
60
88
MAX.
1
m100
2.5
5.0
7.8
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 30 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 8.0 A
VGS = 10 V, ID = 16 A
VGS = 4.5 V, ID = 16 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 8.0 A,
VGS = 10 V,
RG = 10 Ω
VDD = 24 V,
VGS = 10 V,
ID = 16 A
IF = 16 A, VGS = 0 V
IF = 16 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
VGS = 20 0 V
50 Ω
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
VDS()
90%
VDS
VDS
Wave Form 0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0867EJ0100 Rev.1.00
Aug 28, 2012
Page 2 of 6


Features Data Sheet μPA2735GR P-channel MOSFET –30 V, –16 A, 5.0 mΩ R07DS0867EJ0 100 Rev.1.00 Aug 28, 2012 Description The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC co nverter and power management applicatio ns of portable equipment. Features • VDSS = −30 V (TA = 25°C) • Low on -state resistance ⎯ RDS(on) = 5.0 mΩ MAX. (VGS = −10 V, ID = −16 A) • 4.5 V Gate-drive available • Small a nd surface mount package (Power SOP8) Pb-free and Halogen free Power SOP8 Ordering Information Part No. μ PA27 35GR-E1-AT μ PA2735GR-E2-AT LEAD PLAT ING Pure Sn PACKING Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Absolut e Maximum Ratings (TA = 25°C) Item Dr ain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cur rent (DC) Drain Current (pulse) ∗1 To tal Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg.
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