IRF7353D1PbF

PD - 95251A IRF7353D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications A l N-Channel HEXFET A l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint S G l Lead-Free Description FETKYä MOSFET / Schottky Diode 18 27 36 45 Top View K VDSS = 30V K D RDS(on) = 0.029Ω D Schottky Vf = 0.39V The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Maximum ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Continuous Drain Current Pulsed Drain Current À Power Dissipation Linear Derating Factor 6.5 5.2 52 2.0 1.3 16 VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt Á ± 20 -5.0 TJ, TSTG Junction and Storage Temperature Range -55 to +150 Units A W mW/°C V V/ns °C Therma...