NP32N055HDE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Channel temperature 175 degree rated Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) Low Ciss : Ciss = 1300 pF TYP. ORDERING INFORMATION PART NUMBER PACKAGE NP32N055HDE NP32N055IDE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP32N055SDE Note Not for new design. TO-252 (JEDEC) / MP-3ZK ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) ID(DC) ±32 Drain Current (pulse) Note1 ID(pulse) ±100 Total Power Dissipation (TC = 25°C) PT1 66 Total Power Dissipation (TA = 25°C) PT2 1.2 Channel Temperature Tch 175 Storage Temperature Tstg –55 to +175 Single Avalanche Current Note2 IAS 28 / 21 / 8 Single Avalanche Energy Note2 EAS 7.8 / 44 / 64 V V A A W W °C °C A mJ (TO-251) (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.27 °C/W 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the...