LMBT5087LT1G Noise Transistor Datasheet

LMBT5087LT1G Datasheet, PDF, Equivalent


Part Number

LMBT5087LT1G

Description

Low Noise Transistor

Manufacture

Leshan Radio Company

Total Page 7 Pages
Datasheet
Download LMBT5087LT1G Datasheet


LMBT5087LT1G
LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
LMBT5087LT1G
ORDERING INFORMATION
Device
Marking
Shipping
LMBT5087LT1G
2Q
3000/Tape & Reel
LMBT5087LT3G
2Q
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
V CEO
V CBO
V EBO
IC
LMBT5087LT1G =2Q
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation RF-5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
– 50
– 50
– 3.0
– 50
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55to+150
3
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 2C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)
V (BR)CEO
V (BR)CBO
Collector Cutoff Current
I CBO
(V CB = –10 Vdc, I E= 0)
(V CB = –35 Vdc, I E= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
– 50
– 50
Max
–10
–50
Unit
Vdc
Vdc
n Adc
1/7

LMBT5087LT1G
LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = –100µAdc, V CE = –5.0 Vdc)
(I C = –1.0 mAdc, V CE = –5.0 Vdc)
(I C = –10 mAdc, V CE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
h FE
V CE(sat)
250
250
250
––
Base–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
V BE(sat)
––
Max
800
––
––
– 0.3
– 0.85
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –500 µAdc, V CE= –5.0 Vdc, f = 20 MHz)
Output Capacitance
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
(I C= –1.0mAdc, V CE = –5.0Vdc, f = 1.0 kHz)
Noise Figure
f T 40 —
C obo
— 4.0
h fe 250 900
NF
(I C = –20 mAdc, V CE= –5.0 Vdc,Rs=10k, f = 1.0 kHz)
— 2.0
(I C = –100µAdc, V CE= –5.0 Vdc,Rs=3.0k, f = 1.0 kHz)
— 2.0
Unit
––
Vdc
Vdc
MHz
pF
dB
2/7


Features LESHAN RADIO COMPANY, LTD. Low Noise Tr ansistor PNP Silicon • We declare tha t the material of product compliance wi th RoHS requirements. LMBT5087LT1G OR DERING INFORMATION Device Marking Sh ipping LMBT5087LT1G 2Q 3000/Tape & R eel LMBT5087LT3G 2Q 10000/Tape & Ree l MAXIMUM RATINGS Rating Collector–E mitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Curre nt — Continuous DEVICE MARKING Symbo l V CEO V CBO V EBO IC LMBT5087LT1G =2 Q THERMAL CHARACTERISTICS Characterist ic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C Ther mal Resistance, Junction to Ambient Tot al Device Dissipation Alumina Substrate , (2) T A = 25°C Derate above 25°C Th ermal Resistance, Junction to Ambient J unction and Storage Temperature Value – 50 – 50 – 3.0 – 50 Unit Vdc Vdc Vdc mAdc Symbol PD R θJA PD R θJ A T J , T stg Max 225 1.8 556 300 2.4 417 –55to+150 3 1 2 SOT– 23 (TO– 236AB) 1 BASE 3 COLLECTOR 2 EMITTER Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARAC.
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