DatasheetsPDF.com

LMBT5087LT1G Dataheets PDF



Part Number LMBT5087LT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Low Noise Transistor
Datasheet LMBT5087LT1G DatasheetLMBT5087LT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT5087LT1G ORDERING INFORMATION Device Marking Shipping LMBT5087LT1G 2Q 3000/Tape & Reel LMBT5087LT3G 2Q 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous DEVICE MARKING Symbol V CEO V CBO V EBO IC LMBT5087LT1G =2Q THERMAL CHARACTERISTICS Characteristic.

  LMBT5087LT1G   LMBT5087LT1G



Document
LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon • We declare that the material of product compliance with RoHS requirements. LMBT5087LT1G ORDERING INFORMATION Device Marking Shipping LMBT5087LT1G 2Q 3000/Tape & Reel LMBT5087LT3G 2Q 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous DEVICE MARKING Symbol V CEO V CBO V EBO IC LMBT5087LT1G =2Q THERMAL CHARACTERISTICS Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Value – 50 – 50 – 3.0 – 50 Unit Vdc Vdc Vdc mAdc Symbol PD R θJA PD R θJA T J , T stg Max 225 1.8 556 300 2.4 417 –55to+150 3 1 2 SOT– 23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0) V (BR)CEO V (BR)CBO Collector Cutoff Current I CBO (V CB = –10 Vdc, I E= 0) (V CB = –35 Vdc, I E= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Min – 50 – 50 — — Max — — –10 –50 Unit Vdc Vdc n Adc 1/7 LESHAN RADIO COMPANY, LTD. LMBT5087LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min ON CHARACTERISTICS DC Current Gain (I C = –100µAdc, V CE = –5.0 Vdc) (I C = –1.0 mAdc, V CE = –5.0 Vdc) (I C = –10 mAdc, V CE = –5.0 Vdc) Collector–Emitter Saturation Voltage (I C = –10 mAdc, I B = –1.0 mAdc) h FE V CE(sat) 250 250 250 –– Base–Emitter Saturation Voltage (I C = –10 mAdc, I B = –1.0 mAdc) V BE(sat) –– Max 800 –– –– – 0.3 – 0.85 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –500 µAdc, V CE= –5.0 Vdc, f = 20 MHz) Output Capacitance (V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) Small–Signal Current Gain (I C= –1.0mAdc, V CE = –5.0Vdc, f = 1.0 kHz) Noise Figure f T 40 — C obo — 4.0 h fe 250 900 NF (I C = –20 mAdc, V CE= –5.0 Vdc,Rs=10kΩ, f = 1.0 kHz) — 2.0 (I C = –100µAdc, V CE= –5.0 Vdc,Rs=3.0kΩ, f = 1.0 kHz) — 2.0 Unit –– Vdc Vdc MHz pF — dB 2/7 LESHAN RADIO COMPANY, LTD. e n , NOISE VOLTAGE (nV) RS , SOURCE RESISTANCE ( Ω ) LMBT5087LT1G 10 7.0 5.0 3.0 2.0 1.0mA 1.0 10 20 TYPICAL NOISE CHARACTERISTICS (V CE = – 5.0 Vdc, T A = 25°C) IC=10 µA BANDWIDTH = 1.0 Hz R S~~ 0 30µA 100µA 300µA 10.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 In , NOISE CURRENT (pA) IC=1.0mA BANDWIDTH = 1.0 Hz R S ~~ 8 300µA 100µA 30µA 10µA 50 100 200 500 1.0k 2.0k 5.0k 10k 0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k f, FREQUENCY (Hz) Figure 1. Noise Voltage f, FREQUENCY (Hz) Figure 2. Noise Current NOISE FIGURE CONTOURS (V CE = – 5.0 Vdc, T A = 25°C) 1.0M 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 BANDWIDTH = 1.0 Hz 0.5dB 1.0dB 2.0dB 3.0dB 5.0dB 20 30 50 70 100 200 300 500 700 1.0K IC , COLLECTOR CURRENT (µA) Figure 3. Narrow Band, 100 Hz R S , SOURCE RESISTANCE ( Ω ) 1.0M 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 BANDWIDTH = 1.0 Hz 0.5dB 1.0dB 2.0dB 3.0dB 5.0dB 20 30 50 70 100 200 300 500 700 1.0K IC , COLLECTOR CURRENT (µA) Figure 4. Narrow Band, 1.0 kHz 1.0M 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 10 Hz to 15.7kHz 0.5dB 1.0dB 2.0dB 3.0 dB 5.0dB 20 30 50 70 100 200 300 500 700 1.0K IC , COLLECTOR CURRENT (µA) Figure 5. Wideband Noise Figure is Defined as: NF = 20 log 10 ( ––e–n–2–+–4–K4–KTT–RRS–+–I–n–2 R––S2)1/ 2 S e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. (Figure 4) n K = Boltzman’s Constant (1.38 x 10 –23 j/°K) T = Temperature of the Source Resistance (°K) R s = Source Resistance ( Ω ) R S , SOURCE RESISTANCE ( Ω ) 3/7 VCE,COLLECTOR–EMITTERVOLTAGE(VOLTS) LESHAN RADIO COMPANY, LTD. LMBT5087LT1G TYPICAL STATIC CHARACTERISTICS 1.0 TA=25°C 0.8 0.6 I C=1.0mA 10mA 50mA 100mA 0.4 0.2 0 0.002 0.0050.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 I B , BASE CURRENT (mA) Figure 6. Collector Saturation Region 1.4 T J=25°C 1.2 1.0 0.8 VBE(sat) @ I C /I B = 10 0.6 V @BE(on) VCE=1.0V 0.4 0.2 0 0.1 V CE(sat)@ I C /IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 I C , COLLECTOR CURRENT (mA) Figure 10. “On” Voltages 50 100 θV , TEMPERATURE COEFFICIENTS (mV/°C) I C , COLLECTOR CURRENT (mA) 100 T A = 25°C PULSE WIDTH =300 µs 80 DUTYCYCLE<2.0% 300µA 60 350µA 40 20 IB= 400µA 250µA 200µA 150µA 100µA 50µA 0 0 5.0 10 15 20 25 30 35 40 V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Collector Characteristics 1.6 *APPLIES for I C / I B


IRF8113PbF LMBT5087LT1G LMBT5087LT3G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)