LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
PNP Silicon
• We declare that the material of product compliance with RoHS requirements.
LMBT5087LT1G
ORDERING INFORMATION
Device
Marking
Shipping
LMBT5087LT1G
2Q
3000/Tape & Reel
LMBT5087LT3G
2Q
10000/Tape & Reel
MAXIMUM RATINGS Rating
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous
DEVICE MARKING
Symbol V CEO V CBO V EBO IC
LMBT5087LT1G =2Q
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation RF-5 Board (1) T A =25 °C Derate above 25°C
Thermal Resistance, Junction to Ambient Total Device Dissipation
Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Value – 50 – 50 – 3.0 – 50
Unit Vdc Vdc Vdc mAdc
Symbol PD
R θJA PD
R θJA T J , T stg
Max 225
1.8 556 300
2.4 417 –55to+150
3
1 2
SOT– 23 (TO–236AB)
1 BASE
3 COLLECTOR
2 EMITTER
Unit mW
mW/°C °C/W mW
mW/°C °C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –100 µAdc, I E = 0)
V (BR)CEO V (BR)CBO
Collector Cutoff Current
I CBO
(V CB = –10 Vdc, I E= 0)
(V CB = –35 Vdc, I E= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min – 50 – 50
— —
Max — —
–10 –50
Unit Vdc Vdc n Adc
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LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain (I C = –100µAdc, V CE = –5.0 Vdc) (I C = –1.0 mAdc, V CE = –5.0 Vdc) (I C = –10 mAdc, V CE = –5.0 Vdc)
Collector–Emitter Saturation Voltage (I C = –10 mAdc, I B = –1.0 mAdc)
h FE V CE(sat)
250 250 250
––
Base–Emitter Saturation Voltage (I C = –10 mAdc, I B = –1.0 mAdc)
V BE(sat)
––
Max
800 –– –– – 0.3
– 0.85
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (I C = –500 µAdc, V CE= –5.0 Vdc, f = 20 MHz)
Output Capacitance (V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain (I C= –1.0mAdc, V CE = –5.0Vdc, f = 1.0 kHz)
Noise Figure
f T 40 —
C obo
— 4.0
h fe 250 900
NF
(I C = –20 mAdc, V CE= –5.0 Vdc,Rs=10kΩ, f = 1.0 kHz)
— 2.0
(I C = –100µAdc, V CE= –5.0 Vdc,Rs=3.0kΩ, f = 1.0 kHz)
— 2.0
Unit ––
Vdc Vdc
MHz pF — dB
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LESHAN RADIO COMPANY, LTD.
e n , NOISE VOLTAGE (nV)
RS , SOURCE RESISTANCE ( Ω )
LMBT5087LT1G
10 7.0 5.0
3.0
2.0 1.0mA
1.0 10
20
TYPICAL NOISE CHARACTERISTICS (V CE = – 5.0 Vdc, T A = 25°C)
IC=10 µA
BANDWIDTH = 1.0 Hz R S~~ 0
30µA
100µA 300µA
10.0 7.0 5.0 3.0 2.0
1.0 0.7 0.5 0.3 0.2
In , NOISE CURRENT (pA)
IC=1.0mA
BANDWIDTH = 1.0 Hz R S ~~
8
300µA 100µA
30µA 10µA
50 100 200
500 1.0k 2.0k
5.0k 10k
0.1 10
20
50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz) Figure 1. Noise Voltage
f, FREQUENCY (Hz) Figure 2. Noise Current
NOISE FIGURE CONTOURS (V CE = – 5.0 Vdc, T A = 25°C)
1.0M 500k
200k 100k 50k
20k
10k 5.0k 2.0k
1.0k 500
200 100
10
BANDWIDTH = 1.0 Hz
0.5dB
1.0dB
2.0dB 3.0dB 5.0dB
20 30
50 70 100
200 300 500 700 1.0K
IC , COLLECTOR CURRENT (µA) Figure 3. Narrow Band, 100 Hz
R S , SOURCE RESISTANCE ( Ω )
1.0M 500k
200k 100k
50k 20k
10k 5.0k 2.0k
1.0k 500
200 100
10
BANDWIDTH = 1.0 Hz
0.5dB
1.0dB
2.0dB 3.0dB
5.0dB
20 30 50 70 100
200 300 500 700 1.0K
IC , COLLECTOR CURRENT (µA) Figure 4. Narrow Band, 1.0 kHz
1.0M 500k
200k 100k
50k
20k
10k 5.0k 2.0k
1.0k 500
200 100
10
10 Hz to 15.7kHz
0.5dB
1.0dB
2.0dB 3.0 dB 5.0dB
20 30
50 70 100
200 300 500 700 1.0K
IC , COLLECTOR CURRENT (µA)
Figure 5. Wideband
Noise Figure is Defined as:
NF = 20 log 10 ( ––e–n–2–+–4–K4–KTT–RRS–+–I–n–2 R––S2)1/ 2 S
e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. (Figure 4)
n
K = Boltzman’s Constant (1.38 x 10 –23 j/°K) T = Temperature of the Source Resistance (°K) R s = Source Resistance ( Ω )
R S , SOURCE RESISTANCE ( Ω )
3/7
VCE,COLLECTOR–EMITTERVOLTAGE(VOLTS)
LESHAN RADIO COMPANY, LTD. LMBT5087LT1G
TYPICAL STATIC CHARACTERISTICS
1.0
TA=25°C
0.8
0.6 I C=1.0mA 10mA 50mA 100mA
0.4
0.2
0 0.002 0.0050.01 0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
I B , BASE CURRENT (mA) Figure 6. Collector Saturation Region
1.4
T J=25°C
1.2
1.0
0.8
VBE(sat) @ I C /I B = 10
0.6
V @BE(on) VCE=1.0V
0.4
0.2
0 0.1
V CE(sat)@ I C /IB = 10
0.2 0.5 1.0
2.0
5.0 10 20
I C , COLLECTOR CURRENT (mA) Figure 10. “On” Voltages
50 100
θV , TEMPERATURE COEFFICIENTS (mV/°C)
I C , COLLECTOR CURRENT (mA)
100
T A = 25°C PULSE WIDTH =300 µs 80 DUTYCYCLE<2.0%
300µA
60
350µA
40
20
IB= 400µA
250µA 200µA 150µA 100µA 50µA
0 0 5.0 10 15 20 25 30 35 40
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Collector Characteristics
1.6
*APPLIES for I C / I B