LBC807-16LT3G Purpose Transistors Datasheet

LBC807-16LT3G Datasheet, PDF, Equivalent


Part Number

LBC807-16LT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 10 Pages
Datasheet
Download LBC807-16LT3G Datasheet


LBC807-16LT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽPNP complement: LBC807 Series.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16LT1G
LBC807-25LT1G
LBC807-40LT1G
S-LBC807-16LT1G
S-LBC807-25LT1G
S-LBC807-40LT1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC807-16LT1G
5A1 3000/Tape&Reel
LBC807-16LT3G
5A1 10000/Tape&Reel
LBC807-25LT1G
5B1 3000/Tape&Reel
LBC807-25LT3G
5B1 10000/Tape&Reel
LBC807-40LT1G
5C1 3000/Tape&Reel
LBC807-40LT3G
5C1 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Rev.O 1/10

LBC807-16LT3G
LESHAN RADIO COMPANY, LTD.
LBC807-16LT1G,LBC807-25LT1G,LBC807-40LT1G
S-LBC807-16LT1G,S-LBC807-25LT1G,S-LBC807-40LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
Collector Cutoff Current
(V CB = –20 V)
(V CB = –20 V, TJ = 150°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
I CBO
–45 — — V
–50 — — V
–5.0 — — V
–100
nA
— — –5.0 µA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC= –100 mA, VCE = –1.0 V)
LBC807–16
LBC807–25
LBC807–40
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
Base–Emitter On Voltage
(IC = –500 mA, V CE= –1.0 V)
h FE
V CE(sat)
V BE(on)
100 — 250
160 — 400
250 — 600
40 — —
— –0.7
V
— — –1.2 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
fT
C obo
100 — — MHz
— 10 — pF
Rev.O 2/10


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors PNP Silicon FEATURE ƽC ollector current capability IC = -500 m A. ƽCollector-emitter voltage VCEO(max ) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LB C807 Series. ƽ We declare that the mat erial of product compliance with RoHS r equirements. ƽ S- Prefix for Automotiv e and Other Applications Requiring Uniq ue Site and Control Change Requirements ; AEC-Q101 Qualified and PPAP Capable. LBC807-16LT1G LBC807-25LT1G LBC807-40L T1G S-LBC807-16LT1G S-LBC807-25LT1G S-L BC807-40LT1G DEVICE MARKING AND ORDERI NG INFORMATION Device Marking Shippi ng LBC807-16LT1G 5A1 3000/Tape&Reel LBC807-16LT3G 5A1 10000/Tape&Reel LBC 807-25LT1G 5B1 3000/Tape&Reel LBC807- 25LT3G 5B1 10000/Tape&Reel LBC807-40L T1G 5C1 3000/Tape&Reel LBC807-40LT3G 5C1 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Vol tage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C V.
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