LBC807-40LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBC807-16LT1G 5A1 3000/Tape&Reel LBC807-16LT3G 5A1 10000/Tape&Reel LBC807-25LT1G 5B1 3000/Tape&Reel LBC807-25LT3G 5B1 10000/Tape&Reel LBC807-40LT1G 5C1 3000/Tape&Reel LBC807-40LT3G 5C1 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value –45 –50 –5.0 –500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD R θJA PD R θJA T J , T stg Max Unit 225 mW 1.8 mW/°C 556 °C/W 30...