LBC817-25LT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage V CEO V CBO V EBO Collector Current — Continuous I C Value 45 50 5.0 500 Unit V V V mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 2.4 417 –55 to +150 mW mW/°C °C/W °C DEVICE MARKING LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage (I E = –1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CBO 45 50 5.0 — — Typ — — — — — 3 1 2 SOT–23 1 BASE 3 COLLECTOR 2 EMITTER Max Unit —V —V —V 100 nA 5.0 µA 1/3 LESHAN RADIO COMPANY, LTD. LBC817-16LT1G LBC817-25LT1G...