LBC847BLT3G Purpose Transistors Datasheet

LBC847BLT3G Datasheet, PDF, Equivalent


Part Number

LBC847BLT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 13 Pages
Datasheet
Download LBC847BLT3G Datasheet


LBC847BLT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC846ALT1G
Series
S-LBC846ALT1G
Series
3
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCEO
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCBO
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VEBO
Collector Current – Continuous
THERMAL CHARACTERISTICS
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1.)
RqJA
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2.)
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Max
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
12
xx= Device Marking
(See Table Below)
Rev.A 1/13

LBC847BLT3G
LESHAN RADIO COMPANY, LTD.
LBC846ALT1G Series
S-LBC846ALT1G Series
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC846ALT1G
S-LBC846ALT1G
LBC846ALT3G
S-LBC846ALT3G
LBC846BLT1G
LBC846BLT1G
LBC846BLT3G
S-LBC846BLT3G
LBC847ALT1G
S-LBC847ALT1G
LBC847ALT3G
S-LBC847ALT3G
Marking
1A
1A
1B
1B
1E
1E
LBC847BLT1G
S-LBC847BLT1G
LBC847BLT3G
S-LBC847BLT3G
1F
1F
LBC847CLT1G
S-LBC847CLT1G
LBC847CLT3G
S-LBC847CLT3G
LBC848ALT1G
S-LBC848ALT1G
LBC848ALT3G
S-LBC848ALT3G
1G
1G
1J
1J
LBC848BLT1G
S-LBC848BLT1G
LBC848BLT3G
S-LBC848BLT3G
LBC848CLT1G
S-LBC848CLT1G
LBC848CLT3G
S-LBC848CLT3G
LBC849BLT1G
S-LBC849BLT1G
LBC849BLT3G
S-LBC849BLT3G
LBC849CLT1G
S-LBC849CLT1G
LBC849CLT3G
S-LBC849CLT3G
LBC850BLT1G
S-LBC850BLT1G
LBC850BLT3G
S-LBC850BLT3G
LBC850CLT1G
S-LBC850CLT1G
LBC850CLT3G
S-LBC850CLT3G
1K
1K
1L
1L
2B
2B
2C
2C
2E
2E
2G
2G
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Rev.A 2/13


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors NPN Silicon • Moistur e Sensitivity Level: 1 • ESD Rating Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We decla re that the material of product complia nce with RoHS requirements. • S- Pref ix for Automotive and Other Application s Requiring Unique Site and Control Cha nge Requirements; AEC-Q101 Qualified an d PPAP Capable. LBC846ALT1G Series S-L BC846ALT1G Series 3 MAXIMUM RATINGS R ating Symbol Collector–Emitter Volt age LBC846 LBC847, LBC850 LBC848, LBC84 9 VCEO Collector–Base Voltage LBC84 6 LBC847, LBC850 LBC848, LBC849 VCBO Emitter–Base Voltage LBC846 LBC847, L BC850 LBC848, LBC849 VEBO Collector C urrent – Continuous THERMAL CHARACTER ISTICS IC Characteristic Symbol Tot al Device Dissipation FR–5 Board (Not e 1.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambie nt (Note 1.) RqJA Total Device Dissip ation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C PD Thermal Resistance, .
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