LBC848BLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC846ALT1G Series S-LBC846ALT1G Series 3 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCEO Collector–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCBO Emitter–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VEBO Collector Current – Continuous THERMAL CHARACTERISTICS IC Characteristic Symbol Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 1.) RqJA Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 2.) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Max 225 1.8 556 300 2.4 417 –55 to +150 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT–23 1 B ASE 3 COLLECT OR 2 EMIT T ER MARKING DIAGRAM 3 xx 12 xx= Device Marking (See Table Below) Rev.A 1/13 LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series S-LBC846ALT1G Series D...