Purpose Transistors. LBC858ALT1G Datasheet


LBC858ALT1G Transistors. Datasheet pdf. Equivalent


LBC858ALT1G


General Purpose Transistors
LESHAN RADIO COMPANY, LTD.

General Purpose Transistors PNP Silicon

• Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

LBC857CLT1G S-LBC857CLT1G
Series
3

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol Value

Collector-Emitter Voltage

LBC856

LBC857

LBC858, LBC859

VCEO

–65 –45 –30

Collector-Base Voltage

LBC856

LBC857

LBC858, LBC859

VCBO

–80 –50 –30

Emitter–Base Voltage Collector Current – Continuous THERMAL CHARACTERISTICS

VEBO IC

–5.0 –100

Characteristic

Symbol Max

Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C Derate above 25°C

PD 225
1.8

Thermal Resistance, Junction to Ambient

RqJA

556

Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C Derate above 25°C

PD 300
2.4

Thermal Resistance, Junction to Ambient

RqJA

417

Junction and Storage Temperature

TJ, Tstg

1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

–55 to +150

Unit V
V
V mAdc
Unit mW mW/°C °C/W
mW mW/°C °C/W
°C

1 2
SOT–23

1 B ASE

3 COLLECT OR
2 EMIT T ER

MARKING DIAGRAM 3
xx
12 xx= Device Marking (See Table Below)

Rev.O 1/7

LESHAN RADIO CO...



LBC858ALT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC857CLT1G
S-LBC857CLT1G
Series
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
VCEO
–65
–45
–30
Collector-Base Voltage
LBC856
LBC857
LBC858, LBC859
VCBO
–80
–50
–30
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
Characteristic
Symbol Max
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
1.8
Thermal Resistance,
Junction to Ambient
RqJA
556
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance,
Junction to Ambient
RqJA
417
Junction and Storage Temperature
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
–55 to
+150
Unit
V
V
V
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
12
xx= Device Marking
(See Table Below)
Rev.O 1/7

LBC858ALT1G
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series
S-LBC857CLT1G Series
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC856ALT1G
S-LBC856ALT1G
LBC856ALT3G
S-LBC856ALT3G
LBC856BLT1G
S-LBC856BLT1G
LBC856BLT3G
S-LBC856BLT3G
LBC857ALT1G
S-LBC857ALT1G
LBC857ALT1G
S-LBC857ALT1G
Marking
3A
3A
3B
3B
3E
3E
LBC857BLT1G
S-LBC857BLT1G
LBC857BLT3G
S-LBC857BLT3G
LBC857CLT1G
S-LBC857CLT1G
LBC857CLT1G
S-LBC857CLT1G
LBC858ALT1G
S-LBC858ALT1G
LBC858ALT1G
S-LBC858ALT1G
LBC858BLT1G
S-LBC858BLT1G
LBC858BLT3G
S-LBC858BLT3G
3F
3F
3G
3G
3J
3J
3K
3K
LBC858CLT1G
S-LBC858CLT1G
LBC858CLT3G
S-LBC858CLT3G
LBC859BLT1G
S-LBC859BLT1G
LBC859BLT1G
S-LBC859BLT1G
LBC859CLT1G
S-LBC859CLT1G
LBC859CLT3G
S-LBC859CLT3G
3L
3L
4B
4B
4C
4C
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Rev.O 2/7




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