LBC858BLT3G Purpose Transistors Datasheet

LBC858BLT3G Datasheet, PDF, Equivalent


Part Number

LBC858BLT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 7 Pages
Datasheet
Download LBC858BLT3G Datasheet


LBC858BLT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC857CLT1G
S-LBC857CLT1G
Series
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
VCEO
–65
–45
–30
Collector-Base Voltage
LBC856
LBC857
LBC858, LBC859
VCBO
–80
–50
–30
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
Characteristic
Symbol Max
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
1.8
Thermal Resistance,
Junction to Ambient
RqJA
556
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance,
Junction to Ambient
RqJA
417
Junction and Storage Temperature
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
–55 to
+150
Unit
V
V
V
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
12
xx= Device Marking
(See Table Below)
Rev.O 1/7

LBC858BLT3G
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series
S-LBC857CLT1G Series
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC856ALT1G
S-LBC856ALT1G
LBC856ALT3G
S-LBC856ALT3G
LBC856BLT1G
S-LBC856BLT1G
LBC856BLT3G
S-LBC856BLT3G
LBC857ALT1G
S-LBC857ALT1G
LBC857ALT1G
S-LBC857ALT1G
Marking
3A
3A
3B
3B
3E
3E
LBC857BLT1G
S-LBC857BLT1G
LBC857BLT3G
S-LBC857BLT3G
LBC857CLT1G
S-LBC857CLT1G
LBC857CLT1G
S-LBC857CLT1G
LBC858ALT1G
S-LBC858ALT1G
LBC858ALT1G
S-LBC858ALT1G
LBC858BLT1G
S-LBC858BLT1G
LBC858BLT3G
S-LBC858BLT3G
3F
3F
3G
3G
3J
3J
3K
3K
LBC858CLT1G
S-LBC858CLT1G
LBC858CLT3G
S-LBC858CLT3G
LBC859BLT1G
S-LBC859BLT1G
LBC859BLT1G
S-LBC859BLT1G
LBC859CLT1G
S-LBC859CLT1G
LBC859CLT3G
S-LBC859CLT3G
3L
3L
4B
4B
4C
4C
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Rev.O 2/7


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors PNP Silicon • Moistu re Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Ratin g – Machine Model: >400 V • We decl are that the material of product compli ance with RoHS requirements. • S- Pre fix for Automotive and Other Applicatio ns Requiring Unique Site and Control Ch ange Requirements; AEC-Q101 Qualified a nd PPAP Capable. LBC857CLT1G S-LBC857C LT1G Series 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Rating Sy mbol Value Collector-Emitter Voltage LBC856 LBC857 LBC858, LBC859 VCEO 65 –45 –30 Collector-Base Voltag e LBC856 LBC857 LBC858, LBC859 VCBO –80 –50 –30 Emitter–Base Vol tage Collector Current – Continuous T HERMAL CHARACTERISTICS VEBO IC –5.0 –100 Characteristic Symbol Max To tal Device Dissipation FR–5 Board, (N ote 1.) TA = 25°C Derate above 25°C PD 225 1.8 Thermal Resistance, Junctio n to Ambient RqJA 556 Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate abov.
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