LMBT5550LT1G Voltage Transistors Datasheet

LMBT5550LT1G Datasheet, PDF, Equivalent


Part Number

LMBT5550LT1G

Description

High Voltage Transistors

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download LMBT5550LT1G Datasheet


LMBT5550LT1G
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
FEATURE
ƽ We declare that the material of product
compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5550LT1G
S-LMBT5550LT1G
LMBT5550LT3G
S-LMBT5550LT3G
LMBT5551LT1G
S-LMBT5551LT1G
LMBT5551LT3G
S-LMBT5551LT3G
M1F
M1F
G1
G1
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collectorā-āEmitter Voltage
Symbol
MMBT5550
MMBT5551
VCEO
Collectorā-āBase Voltage
MMBT5550
MMBT5551
VCBO
Emitterā-āBase Voltage
Collector Current - Continuous
VEBO
IC
Value
140
160
160
180
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-ā5 Board
(Note 1) @TA = 25°C
Derate Above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate Above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
RqJA
417
TJ, Tstg -ā55 to +150
°C/W
°C
LMBT5550LT1G
LMBT5551LT1G
S-LMBT5550LT1G
S-LMBT5551LT1G
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Rev.O 1/5

LMBT5550LT1G
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1G LMBT5551LT1G
S-LMBT5550LT1G S-LMBT5551LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min Max
Unit
Collectorā-āEmitter Breakdown Voltage (Note 3)
ą(IC = 1.0 mAdc, IB = 0)
LMBT5550
LMBT5551
V(BR)CEO
140
160
-
-
Vdc
Collectorā-āBase Breakdown Voltage
ą(IC = 100 mAdc, IE = 0)
LMBT5550
LMBT5551
V(BR)CBO
160
180
-
-
Vdc
Emitterā-āBase Breakdown Voltage
ą(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
ą(VCB = 100 Vdc, IE = 0)
ą(VCB = 120 Vdc, IE = 0)
ą(VCB = 100 Vdc, IE = 0, TA = 100°C)
ą(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
ą(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)EBO
6.0
-
Vdc
LMBT5550
LMBT5551
LMBT5550
LMBT5551
ICBO
- 100 nAdc
- 50
- 100 mAdc
- 50
IEBO
nAdc
- 50
DC Current Gain
ą(IC = 1.0 mAdc, VCE = 5.0 Vdc)
ą(IC = 10 mAdc, VCE = 5.0 Vdc)
ą(IC = 50 mAdc, VCE = 5.0 Vdc)
LMBT5550
LMBT5551
LMBT5550
LMBT5551
LMBT5550
LMBT5551
hFE
60 -
80 -
60 250
80 250
20 -
30 -
-
Collectorā-āEmitter Saturation Voltage
ą(IC = 10 mAdc, IB = 1.0 mAdc)
ą(IC = 50 mAdc, IB = 5.0 mAdc)
Both Types
LMBT5550
LMBT5551
VCE(sat)
Vdc
- 0.15
- 0.25
- 0.20
Baseā-āEmitter Saturation Voltage
ą(IC = 10 mAdc, IB = 1.0 mAdc)
ą(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Vdc
Both Types
- 1.0
LMBT5550
- 1.2
LMBT5551
- 1.0
Collector Emitter Cut-off
(VCB = 10 V)
(VCB = 75 V)
Both Types
ICES
nA
- 50
- 100
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Rev.O 2/5


Features LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance wit h RoHS requirements. ƽ S- Prefix for A utomotive and Other Applications Requir ing Unique Site and Control Change Requ irements; AEC-Q101 Qualified and PPAP C apable. DEVICE MARKING AND ORDERING IN FORMATION Device Marking Shipping L MBT5550LT1G S-LMBT5550LT1G LMBT5550LT3G S-LMBT5550LT3G LMBT5551LT1G S-LMBT5551 LT1G LMBT5551LT3G S-LMBT5551LT3G M1F M 1F G1 G1 3000/Tape&Reel 10000/Tape&Ree l 3000/Tape&Reel 10000/Tape&Reel MAXIM UM RATINGS Rating Collectorā-āEmitter Voltage Symbol MMBT5550 MMBT5551 VC EO Collectorā-āBase Voltage MMBT555 0 MMBT5551 VCBO Emitterā-āBase Volt age Collector Current - Continuous VEB O IC Value 140 160 160 180 6.0 600 Un it Vdc Vdc Vdc mAdc THERMAL CHARACTERI STICS Characteristic Symbol Max Uni t Total Device Dissipation FR-ā5 Boar d (Note 1) @TA = 25°C Derate Above 25 C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction-to-Ambient Total Dev.
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