LMBT5551LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G S-LMBT5550LT1G LMBT5550LT3G S-LMBT5550LT3G LMBT5551LT1G S-LMBT5551LT1G LMBT5551LT3G S-LMBT5551LT3G M1F M1F G1 G1 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Collectorā-āEmitter Voltage Symbol MMBT5550 MMBT5551 VCEO Collectorā-āBase Voltage MMBT5550 MMBT5551 VCBO Emitterā-āBase Voltage Collector Current - Continuous VEBO IC Value 140 160 160 180 6.0 600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-ā5 Board (Note 1) @TA = 25°C Derate Above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA 417 TJ, Tstg -ā55 to +150 °C/W °C LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G 3 1 2 SOT–23 1 BASE 3 COLLECTOR 2 EMITTER Rev.O 1/5 LESHAN RADIO COMPANY, LTD. LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic ...