LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
FEATURE ƽ We declare that the material of product compliance with R...
LESHAN RADIO COMPANY, LTD.
High Voltage
Transistors
FEATURE ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5550LT1G S-LMBT5550LT1G
LMBT5550LT3G S-LMBT5550LT3G
LMBT5551LT1G S-LMBT5551LT1G
LMBT5551LT3G S-LMBT5551LT3G
M1F M1F G1 G1
3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS Rating
Collectorā-āEmitter Voltage
Symbol
MMBT5550 MMBT5551
VCEO
Collectorā-āBase Voltage
MMBT5550 MMBT5551
VCBO
Emitterā-āBase Voltage Collector Current - Continuous
VEBO IC
Value
140 160
160 180 6.0 600
Unit Vdc
Vdc
Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-ā5 Board (Note 1) @TA = 25°C Derate Above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C
RqJA PD
556 °C/W
300 mW 2.4 mW/°C
Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature
RqJA
417
TJ, Tstg -ā55 to +150
°C/W °C
LMBT5550LT1G LMBT5551LT1G
S-LMBT5550LT1G S-LMBT5551LT1G
3
1 2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1G LMBT5551LT1G S-LMBT5550LT1G S-LMBT5551LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
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