Si7317DN D-S MOSFET Datasheet

Si7317DN Datasheet, PDF, Equivalent


Part Number

Si7317DN

Description

P-Channel 150 V (D-S) MOSFET

Manufacture

Vishay

Total Page 13 Pages
Datasheet
Download Si7317DN Datasheet


Si7317DN
P-Channel 150 V (D-S) MOSFET
Si7317DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 150
RDS(on) () Max.
1.2 at VGS = - 10 V
1.3 at VGS = - 6 V
ID (A)f
- 2.8
- 2.7
Qg (Typ.)
6.5 nC
PowerPAK 1212-8
FEATURES
• TrenchFET® Power MOSFETs
• PowerPAK® Package
- Low Thermal Resistance
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
3.3 mm
S
1S
3.3 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
Si7317DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Active Clamp circiuts in DC/DC
Power Supplies
• Load Switch
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS - 150
VGS
± 30
V
TC = 25 °C
- 2.8
Continuous Drain Current (TJ = 150 °C)a,b
TC = 70 °C
TA = 25 °C
ID
- 2.2
- 1.1a,b
Pulsed Drain Current (t = 100 µs)
TA = 70 °C
IDM
- 0.9a,b
-2
A
Continuous Source-Drain Diode Currenta,b
TC = 25 °C
TA = 25 °C
IS
- 8e
- 2.7a,b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L 0.1 mH
IAS
EAS
4
0.8
mJ
TC = 25 °C
19.8
Maximum Power Dissipationa,b
TC = 70 °C
TA = 25 °C
PD
12.7
3.2a,b
W
TA = 70 °C
2.1a,b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c,d
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. Based on TC = 25 °C.
Document Number: 62892
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1817-Rev. A, 12-Aug-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Si7317DN
Si7317DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
31
5
Maximum
39
6.3
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 30 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 150 V, VGS = 0 V
VDS = - 150 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 15 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 0.5 A
VGS = - 6 V, ID = - 0.5 A
Forward Transconductancea
gfs VDS = - 15 V, ID = - 0.5 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 75 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 75 V, VGS = - 10 V, ID = - 1.1 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 75 V, RL = 83.3
ID - 0.9 A, VGEN = - 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 0.9 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 0.9 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 150
- 2.5
- 1.6
1.1
Typ.
- 150
5.7
1
1.05
3
243
15
11
6.5
1.5
1.9
5.5
7
11
11
10
- 0.8
32
48
27
5
Max.
Unit
- 4.5
- 100
-1
- 10
1.2
1.3
V
mV/°C
V
nA
µA
A
S
365
pF
9.8
nC
11
11
20
ns
20
20
- 16
-2
- 1.2
48
72
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62892
2 S13-1817-Rev. A, 12-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features P-Channel 150 V (D-S) MOSFET Si7317DN V ishay Siliconix PRODUCT SUMMARY VDS ( V) - 150 RDS(on) () Max. 1.2 at VGS = - 10 V 1.3 at VGS = - 6 V ID (A)f - 2.8 - 2.7 Qg (Typ.) 6.5 nC PowerPAK 1212-8 FEATURES • TrenchFET® Power MOSFETs • PowerPAK® Package - Low Th ermal Resistance • 100 % Rg and UIS T ested • Material categorization: For definitions of compliance please see ww w.vishay.com/doc?99912 Available 3.3 mm S 1S 3.3 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Informatio n: Si7317DN-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • Active Clamp circiuts in DC/DC Power Supplies • Load Switch G S D P-Channel MOSFE T ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Volta ge Gate-Source Voltage VDS - 150 VGS ± 30 V TC = 25 °C - 2.8 Continuo us Drain Current (TJ = 150 °C)a,b TC = 70 °C TA = 25 °C ID - 2.2 - 1.1a, b Pulsed Drain Current (t = 100 µs) TA = 70 °C IDM - 0.9a,b -2 A Continuous Sou.
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