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CTS100ELT22TG Dataheets PDF



Part Number CTS100ELT22TG
Manufacturers CTS
Logo CTS
Description Dual CMOS/TTL to Differential PECL Translator
Datasheet CTS100ELT22TG DatasheetCTS100ELT22TG Datasheet (PDF)

CTS100ELT22 Dual CMOS/TTL to Differential PECL Translator MSOP8, SOIC8 FEATURES  0.5ns Typical Propogation Delay  <100ps Typical Output to Output Skew  Flow Through Pinouts  Differential PECL Output  RoHS Compliant Pb Free Packages BLOCK DIAGRAM DESCRIPTION The CTS100ELT22 is a dual CMOS/TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only VCC and ground are required. The small outline packaging and the low skew, dual gate design of the CTS100ELT22 makes.

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CTS100ELT22 Dual CMOS/TTL to Differential PECL Translator MSOP8, SOIC8 FEATURES  0.5ns Typical Propogation Delay  <100ps Typical Output to Output Skew  Flow Through Pinouts  Differential PECL Output  RoHS Compliant Pb Free Packages BLOCK DIAGRAM DESCRIPTION The CTS100ELT22 is a dual CMOS/TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only VCC and ground are required. The small outline packaging and the low skew, dual gate design of the CTS100ELT22 makes it ideal for applications that require the translation of a clock and a data signal. The CTS100ELT22 is a direct replacement for the ON Semi MC100ELT22, MC100LVELT22 and Micrel SY89322V. ENGINEERING NOTES When the D input is left floating, the Q output is forced HIGH, and the Q output is forced LOW. CTS100ELT22 Large Signal Bandwidth North Americas: +1-800-757-6686 • International: +1-508-435-6831 • Asia: +65-655-17551 • www.ctscorp.com/semiconductors Specifications are subject to change without notice. 1 RevB0215 CTS100ELT22 Dual CMOS/TTL to Differential PECL Translator MSOP8, SOIC8 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings are those values beyond which device life may be impaired. Symbol VCC VIN IOUT TA TSTG ESDHBM ESDMM ESDCDM Characteristic DC Power Supply Input Voltage Output Current Operating Temperature Range Storage Temperature Range Human Body Model Machine Model Charged Device Model Condition (VEE = 0V) (VEE = 0V) Continuous Surge Rating 0 to +8.0 0 to +6.0 50 100 -40 to +85 -65 to +150 2500 200 2500 Unit V V mA °C °C V V V Symbol IIH IIHH IIL VIK VIH VIL TTL/CMOS Input DC Characteristics (GND = 0.0V, VCC = +3.3V to 5.5V) Characteristic Condition Min Typ Max Input HIGH Current Input HIGH Current Input LOW Current VIN = 2.7V VIN = VCC VIN = 0.5V 15 20 -0.1 Input Clamp Diode Voltage IIN = -18mA -1.2 Input HIGH Voltage Input LOW Voltage 2 0.8 Unit µA µA mA V V V Symbol VOH VOL ICC 1 2 3 LVPECL DC Characteristics (GND = 0.0V, VCC = +3.3V) Characteristic Output HIGH Voltage1, 2 Output LOW Voltage1, 2 Power Supply Current3 -40 °C 0 °C Min 2160 Typ Max Min Typ Max 2420 2205 2420 1470 1745 1490 1680 24 24 Each output is terminated through a 50Ω resistor to VCC - 2V. Output parameters vary 1:1 with VCC. ICC measurements must be done with outputs open. 25 °C Min Typ Max 2235 2345 2420 1490 1595 1680 24 85 °C Min Typ Max 2255 2420 1490 1680 25 Unit mV mV Ma North Americas: +1-800-757-6686 • International: +1-508-435-6831 • Asia: +65-655-17551 • www.ctscorp.com/semiconductors Specifications are subject to change without notice. 2 RevB0215 CTS100ELT22 Dual CMOS/TTL to Differential PECL Translator MSOP8, SOIC8 Symbol VOH VOL IEE 1 2 3 PECL DC Characteristics (GND = 0.0V, VCC = +5.0V) Characteristic Output HIGH Voltage1, 2 Output LOW Voltage1,2 Power Supply Current3 -40 °C 0 °C Min 3860 Typ Max Min Typ Max 4120 3905 4120 3170 3445 3190 3380 24 24 25 °C Min Typ Max 3935 4045 4120 3190 3.


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