SBC847BLT1G Purpose Transistors Datasheet

SBC847BLT1G Datasheet, PDF, Equivalent


Part Number

SBC847BLT1G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download SBC847BLT1G Datasheet


SBC847BLT1G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
We declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
45
Vdc
Collector–Base Voltage
VCBO
50
Vdc
Emitter–Base Voltage
VEBO
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 1.)
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient (Note 2.)
Junction and Storage
Temperature Range
IC
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
6.0
100
Max
225
1.8
556
300
2.4
417
–55 to
+150
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING AND ORDERING INFORMATION
SBC847BLT1G
S1F
(Pb-Free)
SOT-23
SBC847BLT1G
3
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
xx= Device Marking
(See Table Below)
3000/Tape&Reel
1/5

SBC847BLT1G
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO 45
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
V(BR)CES 50
Collector–Base Breakdown Voltage
(IC = 10 mA)
Emitter–Base Breakdown Voltage
(IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
V(BR)CBO 50
V(BR)EBO 6.0
ICBO
(IC = 2.0 mA, VCE = 5.0 V)
hFE
200
SBC847BLT1G
Typ Max Unit
––V
––V
––V
––V
– 15 nA
– 5.0 µA
150 –
290 450
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
(VCE = 5.0 Vdc, RS = 2.0 k
f = 1.0 kHz, BW = 200 Hz)
VCE(sat)
VBE(sat)
VBE(on)
610
– 0.25
– 0.6 V
0.7 –
0.9 –
V
– 630 mV
– 770
fT 100 – – MHz
Cobo
NF
– 4.5 pF
– 10 dB
2/5


Features LESHAN RADIO COMPANY, LTD. General Purp ose Transistors NPN Silicon • Moistu re Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Ratin g – Machine Model: >400 V • We decl are that the material of product compli ance with RoHS requirements. MAXIMUM R ATINGS Rating Symbol Value Unit Col lector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 50 V dc Emitter–Base Voltage VEBO Colle ctor Current – Continuous THERMAL CHA RACTERISTICS Characteristic Total Devic e Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Res istance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substr ate (Note 2.) TA = 25°C Derate above 2 5°C Thermal Resistance, Junction to Am bient (Note 2.) Junction and Storage Te mperature Range IC Symbol PD RqJA PD R qJA TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 6.0 100 Max 225 1. 8 556 300 2.4 417 –55 to +150 Vdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKI.
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