Amplifier Transistor. L2SC3837QLT3G Datasheet


L2SC3837QLT3G Transistor. Datasheet pdf. Equivalent


L2SC3837QLT3G


High-Frequency Amplifier Transistor
LESHAN RADIO COMPANY, LTD.

High-Frequency Amplifier

Transistor

z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps)
3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Parameter

Symbol

Value

Collector-Base Voltage

VCBO

30

Collector-Emitter Voltage

VCEO

18

Emitter-base voltage

VEBO

3

Collector Current

IC 50

Collector power dissipation

PC 0.2

Junction temperature

Tj 150

Storage temperature

Tstg -55~+150

Unit V V V mA W °C °C

DEVICE MARKING L2SC3837QLT1G;S-L2SC3837QLT1G=AQ

L2SC3837QLT1G S-L2SC3837QLT1G

3

1 2 SOT-23

COLLECTOR 3

1 BASE

2 EMITTER

z ORDERING INFORMATION

Device
L2SC3837QLT1G S-L2SC3837QLT1G L2SC3837QLT3G S-L2SC3837QLT3G

Package SOT-23 SOT-23

Shipping 3000/Tape & Reel 10000/Tape & Reel

ELECTRICAL CHARACTERISTICS(TA= 25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance

BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob

30 18 3 120 600 -

Collect...



L2SC3837QLT3G
LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features
1.High transition frequency.(Typ.fT=1.5GHz)
2.Small rbb`Cc and high gain.(Typ.6ps)
3.Small NF.
4.We declare that the material of product compliance with RoHS requirements.
5.S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
18
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 0.2
Junction temperature
Tj 150
Storage temperature
Tstg -55~+150
Unit
V
V
V
mA
W
°C
°C
DEVICE MARKING
L2SC3837QLT1G;S-L2SC3837QLT1G=AQ
L2SC3837QLT1G
S-L2SC3837QLT1G
3
1
2
SOT-23
COLLECTOR
3
1
BASE
2
EMITTER
z ORDERING INFORMATION
Device
L2SC3837QLT1G
S-L2SC3837QLT1G
L2SC3837QLT3G
S-L2SC3837QLT3G
Package
SOT-23
SOT-23
Shipping
3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
30
18
3
-
-
-
120
600
-
Collector-base time constant
rbb`Cc
-
Noise factor
NF -
Typ
-
-
-
-
-
-
-
1500
0.9
6
4.5
Max.
-
-
-
0.5
0.5
0.5
270
-
1.5
13
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
ps
dB
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=10V
VEB= 2 V
IC/IB=20mA/4mA
VCE/IC=10V/10mA
VCB=10V, IC=10mA, f=200MHz
VCB=10V, IE=0A, f=1MHz
VCB=10V, IC=10mA, f=31.8MHz
VCE=12V, IC=2mA, f=200MHz,Rg=50
Rev.O 1/2

L2SC3837QLT3G
LESHAN RADIO COMPANY, LTD.
L2SC3837QLT1G ;S-L2SC3837QLT1G
A
L
3
BS
12
VG
C
D
H
K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
Rev.O 2/2




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