L9012SLT3G Purpose Transistors Datasheet

L9012SLT3G Datasheet, PDF, Equivalent


Part Number

L9012SLT3G

Description

General Purpose Transistors

Manufacture

Leshan Radio Company

Total Page 2 Pages
Datasheet
Download L9012SLT3G Datasheet


L9012SLT3G
General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
L9012PLT1G
Series
S-L9012PLT1G
Series
Device
L9012PLT1G
S-L9012PLT1G
L9012PLT3G
S-L9012PLT3G
L9012QLT1G
S-L9012QLT1G
L9012QLT3G
S-L9012QLT3G
L9012RLT1G
S-L9012RLT1G
L9012RLT3G
L9012RLT3G
L9012SLT1G
S-L9012SLT1G
L9012SLT3G
S-L9012SLT3G
Marking
12P
Shipping
3000/Tape&Reel
12P
12Q
10000/Tape&Reel
3000/Tape&Reel
12Q 10000/Tape&Reel
12R 3000/Tape&Reel
12R 10000/Tape&Reel
12S 3000/Tape&Reel
12S 3000/Tape&Reel
12S 10000/Tape&Reel
3
1
2
SOT-23 (TO-236AB)
1
BASE
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
2
EMITTER
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-20
-40
-5
-500
V
V
V
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 oC
Derate above 25oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θJA
Tj ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/oC
oC/W
mW
mW/oC
oC/W
oC
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1.0mA)
Emitter-Base Breakdown Voltage
(IE=-100µ A)
Collector-Base Breakdown Voltage
(IC=-100µ A)
Collector Cutoff Current (VCB=-35V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
I CBO
-20
-5
-40
-
-
-
-
-
Emitter Cutoff Current (VBE=-4V)
IEBO
Max
-
-
-
-150
-150
Unit
V
V
V
nA
nA
Rev.O 1/2

L9012SLT3G
LESHAN RADIO COMPANY, LTD.
L9012PLT1G Series
S-L9012PLT1G Series
ON CHARACTERISTICS
DC Current Gain
(IC=-50mA, VCE =-1V)
Collector-Emitter Saturation Voltage
(IC=-500mA,I B=-50mA)
H fe
VCE(S)
100
-
-
-
NOTE:
*
HFE
P
QR
S
100~200 150~300 200~400 300~600
600
-0.6
V
SOT-23 (TO-236AB)
A
L
3
BS
12
VG
C
D H KJ
0.037
0.95
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 2/2


Features General Purpose Transistors LESHAN RADI O COMPANY, LTD. PNP Silicon FEATURE We declare that the material of product c ompliance with RoHS requirements. S- Pr efix for Automotive and Other Applicati ons Requiring Unique Site and Control C hange Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND OR DERING INFORMATION L9012PLT1G Series S -L9012PLT1G Series Device L9012PLT1G S -L9012PLT1G L9012PLT3G S-L9012PLT3G L90 12QLT1G S-L9012QLT1G L9012QLT3G S-L9012 QLT3G L9012RLT1G S-L9012RLT1G L9012RLT3 G L9012RLT3G L9012SLT1G S-L9012SLT1G L9 012SLT3G S-L9012SLT3G Marking 12P Shi pping 3000/Tape&Reel 12P 12Q 10000/Ta pe&Reel 3000/Tape&Reel 12Q 10000/Tape& Reel 12R 3000/Tape&Reel 12R 10000/Tape &Reel 12S 3000/Tape&Reel 12S 3000/Tape& Reel 12S 10000/Tape&Reel 3 1 2 SOT-23 (TO-236AB) 1 BASE 3 COLLECTOR MAXIMU M RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Voltage V CEO Collector-Base Voltage VCBO Emit ter-Base Voltage VEBO Collector current-continuoun IC THERM.
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