Purpose Transistors. L9014QLT3G Datasheet


L9014QLT3G Transistors. Datasheet pdf. Equivalent


L9014QLT3G


General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors

NPN Silicon
FEATURE
ƽComplementary to L9014.
ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

L9014QLT1G
Series S-L9014QLT1G
Series

DEVICE MARKING AND ORDERING INFORMATION

Device L9014QLT1G

S-L9014QLT1G

Marking 14Q

Shipping 3000/Tape&Reel

L9014QLT3G S-L9014QLT3G

14Q

10000/Tape&Reel

L9014RLT1G S-L9014RLT1G 14R

3000/Tape&Reel

L9014RLT3G S-L9014RLT3G 14R

10000/Tape&Reel

L9014SLT1G S-L9014SLT1G 14S

3000/Tape&Reel

L9014SLT3G S-L9014SLT3G 14S

10000/Tape&Reel

L9014TLT1G S-L9014TLT1G 14T

3000/Tape&Reel

L9014TLT3G S-L9014TLT3G 14T

10000/Tape&Reel

MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun

Symbol VCEO VCBO VEBO IC

Value 45 50 5 100

Unit V V V mA

THERMAL CHARATEERISTICS

Characteristic

Symbol Max

Unit

Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC

PD

225 mW 1.8 mW/ oC

Thermal Resistance, Junction to Ambient R©JA

556 o C/W

Total Device Dissipation

PD

Alumina Substrate, (2) TA=25 oC

300 mW

Derate above 25oC

2.4 mW/ oC

Thermal Resistance, Junction to Ambient R©JA

417 oC /W

Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062...



L9014QLT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽComplementary to L9014.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G
Series
S-L9014QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9014QLT1G
S-L9014QLT1G
Marking
14Q
Shipping
3000/Tape&Reel
L9014QLT3G S-L9014QLT3G
14Q
10000/Tape&Reel
L9014RLT1G S-L9014RLT1G 14R
3000/Tape&Reel
L9014RLT3G S-L9014RLT3G 14R
10000/Tape&Reel
L9014SLT1G S-L9014SLT1G 14S
3000/Tape&Reel
L9014SLT3G S-L9014SLT3G 14S
10000/Tape&Reel
L9014TLT1G S-L9014TLT1G 14T
3000/Tape&Reel
L9014TLT3G S-L9014TLT3G 14T
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
5
100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
PD
225 mW
1.8 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
556 o C/W
Total Device Dissipation
PD
Alumina Substrate, (2) TA=25 oC
300 mW
Derate above 25oC
2.4 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
417 oC /W
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
TJ ,Tstg
-55 to +150 o C
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4

L9014QLT3G
LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100­A)
Collector-Base Breakdown Voltage
(IC=100­A)
Collector Cutoff Current (VCB=40V)
Emitter Cutoff Current (VEB=3V)
ON CHARACTERISTICS
Symbol
V(BR)CEO
Min
45
V(BR)EBO
5
V(BR)CBO
50
ICBO
IEBO
-
Typ
-
-
-
-
DC Current Gain
(IC=1mA, VCE=5V)
Collector-Emitter Saturation Voltage
(IC=100mA,IB=5mA)
HFE 150
VCE -
-
-
NOTE:
*
QRS
T
HFE 150~300 200~400 300~600 400~1000
Max
-
-
-
100
100
1000
0.3
Unit
V
V
V
nA
nA
V
Rev.O 2/4




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)