Amplifier Transistors. LMBT6429LT3G Datasheet


LMBT6429LT3G Transistors. Datasheet pdf. Equivalent


LMBT6429LT3G


Amplifier Transistors
LESHAN RADIO COMPANY, LTD.

Amplifier Transistors

NPN Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION

Device
(S-)LMBT6428LT1G (S-)LMBT6428LT3G (S-)LMBT6429LT1G (S-)LMBT6429LT3G

Marking
1KM 1KM M1L M1L

Shipping
3000/Tape & Reel 10000/Tape & Reel
3000/Tape & Reel 10000/Tape & Reel

MAXIMUM RATINGS Rating

Value Symbol 6428LT1 6429LT1 Unit

Collector–Emitter Voltage

V CEO

Collector–Base Voltage

V CBO

Emitter–Base Voltage

V EBO

Collector Current — Continuous I C

50 45 60 55
6.0 200

Vdc Vdc Vdc mAdc

THERMAL CHARACTERISTICS

LMBT6428LT1G LMBT6429LT1G S-LMBT6428LT1G S-LMBT6429LT1G
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
3 COLLECTOR
1 BASE

Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING

Symbol PD
RθJA PD
RθJA TJ , Tstg

Max Unit

225 mW 1.8 mW/°C 556 °C/W

300 mW 2.4 mW/°C

417 –55 to +150

°C/W °C

2 EMITTER

(S-)LMBT6428LT1G = 1KM, (S-)LMBT6429LT1G = M1L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristi...



LMBT6429LT3G
LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
(S-)LMBT6428LT1G
(S-)LMBT6428LT3G
(S-)LMBT6429LT1G
(S-)LMBT6429LT3G
Marking
1KM
1KM
M1L
M1L
Shipping
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Value
Symbol 6428LT1 6429LT1 Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
50 45
60 55
6.0
200
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
LMBT6428LT1G
LMBT6429LT1G
S-LMBT6428LT1G
S-LMBT6429LT1G
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
COLLECTOR
1
BASE
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
2
EMITTER
(S-)LMBT6428LT1G = 1KM, (S-)LMBT6429LT1G = M1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
LMBT6428LT1G
50 —
(I C = 1.0 mAdc, I B = 0)
LMBT6429LT1G
45 —
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
(I C = 0.1mAdc, I E = 0)
LMBT6428LT1G
60 —
(I C = 0.1mAdc, I E = 0)
LMBT6429LT1G
55 —
Collector Cutoff Current
I CES
µAdc
( V CE = 30Vdc, )
— 0.1
Collector Cutoff Current
I CBO
µAdc
( V CB = 30Vdc, I E = 0 )
— 0.01
Emitter Cutoff Current
( V EB = 5.0Vdc, I C= 0)
I EBO — 0.01 µAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/5

LMBT6429LT3G
LESHAN RADIO COMPANY, LTD.
LMBT6428LT1G LMBT6429LT1G
S-LMBT6428LT1G S-LMBT6429LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(I C = 0.01 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
hFE
(I C = 0.1 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
(I C = 10 mAdc, V CE = 5.0 Vdc)
LMBT6428LT1G
LMBT6429LT1G
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 0.5 mAdc)
(I C = 100 mAdc, I B = 5.0 mAdc)
Base–Emitter On Voltage
(I C = 1.0 mAdc, V CE = 5.0mAdc)
VCE(sat)
V BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz)
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz)
fT
C obo
C ibo
Min
250
500
250
500
250
500
250
500
––
––
0.56
100
––
––
Max
650
1250
0.2
0.6
0.66
Unit
––
Vdc
Vdc
700 MHz
3.0 pF
8.0 pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
Rev.O 2/5




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