LMBTA70LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTA70LT1G Device LMBTA70LT1G LMBTA70LT3G Marking M2C M2C Shipping 3000/Tape&Reel 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value –40 –4.0 –100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBTA70LT1G = M2C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –1.0 mAdc, I B = 0) Emitter–Base Breakdown Voltage (I E = –100 µAdc, I C = 0) Collector Cutoff Current ( V CB = –30Vdc, I E = 0) ON CHARACTERISTICS DC Current Gain(I C = –5.0mAdc, V CE = –10 Vdc) Collector–Emitter Saturation Voltage(I C = –10mAdc, I B = –1.0 mAdc) V (BR)CEO V (BR)EBO I CBO hFE VCE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(I C = –5.0m...