LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 ...
LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon
transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base voltage.
VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available.
L2SD2114K*LT1
3 1
2 SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
VCBO VCEO VEBO
Collector current
IC
Collector power dissipation
Junction temperature Storage temperature
∗ Single pulse Pw=100ms
PC
Tj Tstg
Limits 25 20 12 0.5 1
0.2
150 −55∼+150
Unit V V V
A(DC)
A(Pulse) ∗
W
°C °C
COLLECTOR 3
1 BASE
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage
Symbol Min. Typ. Max. Unit
Conditions
BVCBO 25
−
−
V IC=10µA
BVCEO 20
−
−
V IC=1mA
BVEBO 12
−
−
V IE=10µA
ICBO
−
− 0.5 µA VCB=20V
IEBO
−
− 0.5 µA VEB=10V
VCE(sat)
−
0.18 0.4
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency Output capacitance Output On-resistance
∗ Measured using pulse current
hFE 820 − 2700 − VCE=3V, IC=10mA
fT∗ − 350 − MHz VCE=10V, IE=−50mA, f=100MHz
Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Orde...