L2SD2114KWLT1G

LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K*LT1 3 1 2 SOT– 23 (TO–236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms PC Tj Tstg Limits 25 20 12 0.5 1 0.2 150 −55∼+150 Unit V V V A(DC) A(Pulse) ∗ W °C °C COLLECTOR 3 1 BASE 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol Min. Typ. Max. Unit Conditions BVCBO 25 − − V IC=10µA BVCEO 20 − − V IC=1mA BVEBO 12 − − V IE=10µA ICBO − − 0.5 µA VCB=20V IEBO − − 0.5 µA VEB=10V VCE(sat) − 0.18 0.4 V IC/IB=500mA/20mA DC current transfer ratio Transition frequency Output capacitance Output On-resistance ∗ Measured using pulse current hFE 820 − 2700 − VCE=3V, IC=10mA fT∗ − 350 − MHz VCE=10V, IE=−50mA, f=100MHz Cob − 8.0 − pF VCB=10V, IE=0A, f=1MHz Ron − 0.8 − pF IB=1mA, Vi=100mV(rms), f=1kHz ƽ hFE Values Classification, Device Marking and Orde...