L2SD2114KWLT1 silicon transistor Datasheet

L2SD2114KWLT1 Datasheet, PDF, Equivalent


Part Number

L2SD2114KWLT1

Description

Epitaxial planar type NPN silicon transistor

Manufacture

Leshan Radio Company

Total Page 4 Pages
Datasheet
Download L2SD2114KWLT1 Datasheet


L2SD2114KWLT1
LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
www.DataSheet4U.com3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
4) Pb-Free package is available.
L2SD2114K*LT1
3
1
2
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power
dissipation
Junction temperature
Storage temperature
Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
150
55∼+150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
COLLECTOR
3
1
BASE
2
EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol Min. Typ. Max. Unit
Conditions
BVCBO 25
V IC=10µA
BVCEO 20
V IC=1mA
BVEBO 12
V IE=10µA
ICBO
0.5 µA VCB=20V
IEBO
0.5 µA VEB=10V
VCE(sat)
0.18 0.4
V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
hFE 820 2700 VCE=3V, IC=10mA
fT350 MHz VCE=10V, IE=−50mA, f=100MHz
Cob 8.0 pF VCB=10V, IE=0A, f=1MHz
Ron 0.8 pF IB=1mA, Vi=100mV(rms), f=1kHz
ƽ hFE Values Classification, Device Marking and Ordering Information
Device
hFE
Marking
Shipping
L2SD2114KVLT1
820~1800
BV 3000/Tape&Reel
L2SD2114KVLT1G
820~1800
BV
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1
1200~2700
BW 3000/Tape&Reel
L2SD2114KWLT1G
1200~2700
BW
(Pb-Free)
3000/Tape&Reel
L2SD2114K*LT1–1/4

L2SD2114KWLT1
LESHAN RADIO COMPANY, LTD.
zElectrical characteristic curves
2.0
Ta=25˚C
1.6 2.0µA
1.8µA
1.2
1.6µA
1.4µA
1.2µA
1.0µA
0.8µA
0.8
0.6µA
www.DataSheet4U.com 0.4
0.4µA
0.2µA
0 IB=0
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output
characteristics(Ι)
1000
1.8mA 2.0mA
1.6mA
1.4mA
800
1.2mA
1.0mA
600 0.8mA
0.6mA
400 0.4mA
0.2mA
200
Ta=25°C
Measured using
0 IB=0mA pulse current.
0 2 4 6 8 10
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteristics(ΙΙ)
L2SD2114K*LT1
1000
500
200
100
50
Ta=100°C
25°C
25°C
VCE=3V
Measured using
pulse current.
20
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Grounded emitter propagation
characteristics
10000
5000
2000
1000
500
200
100
50
Ta=25°C
Measured using
pulse current.
VCE=5V
3V
1V
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC(mA)
Fig.4 DC current gain vs. collector
current(Ι)
10000
5000
2000
1000
500
200
100
50
VCE=3V
Measured using
pulse current.
Ta=100°C
25°C
25°C
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC(mA)
Fig.5 DC current gain vs.
collector current(ΙΙ)
2000
1000
500
Ta=25°C
Measured using
pulse current.
200
100
50
IC/IB=100
20 50
25
10 10
5
2
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current(Ι)
2000
1000
500
IC/IB=25
Measured using
pulse current.
200
100
Ta=100°C
50 25°C
25°C
20
10
5
2
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current(ΙΙ)
10000
5000
2000
1000
500
IC/IB=10
25
50
100
Ta=25°C
Pulsed
200
100
50
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC(mA)
Fig.8 Base-emitter saturation
voltage vs. collector current(Ι)
10000
5000
2000
1000
500
Ta=−25°C
25°C
100°C
lC/lB=10
Measured using
pulse current.
200
100
50
20
10
12
5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current(ΙΙ)
L2SD2114K*LT1-2/4


Features LESHAN RADIO COMPANY, LTD. Epitaxial pl anar type NPN silicon transistor zFeat ures 1) High DC current gain. hFE = 120 0 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free pa ckage is available. L2SD2114K*LT1 3 1 2 SOT– 23 (TO–236AB) zAbsolute max imum ratings (Ta=25°C) Parameter Sym bol Collector-base voltage Collector-e mitter voltage Emitter-base voltage VC BO VCEO VEBO Collector current IC Co llector power dissipation Junction temp erature Storage temperature ∗ Single pulse Pw=100ms PC Tj Tstg Limits 25 2 0 12 0.5 1 0.2 150 −55∼+150 Unit V V V A(DC) A(Pulse) ∗ W °C °C COLL ECTOR 3 1 BASE 2 EMITTER zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collec tor-emitter breakdown voltage Emitter-b ase breakdown voltage Collector cutoff current Emitter cutoff current Collecto r-emitter saturation voltage Symbol Min. Typ. Max. Unit Conditions BVCBO 25 .
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