LMBTA42LT1G

High Voltage Transistors LESHAN RADIO COMPANY, LTD. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G LMBTA43LT1G S-LMBTA42LT1G S-LMBTA43LT1G LMBTA42LT1G LMBTA42LT3G 1D 1D SOT-23 SOT-23 3000/Tape&Reel 10000/Tape&Reel LMBTA43LT1G M1E SOT-23 3000/Tape&Reel LMBTA43LT3G MAXIMUM RATINGS Rating M1E SOT-23 10000/Tape&Reel Value Symbol LMBTA42 LMBTA43 Unit Collector–Emitter Voltage V CEO 300 200 Vdc Collector–Base Voltage V CBO 300 200 Vdc Emitter–Base Voltage V EBO 6.0 6.0 Vdc Collector Current — Continuous I C THERMAL CHARACTERISTICS 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) TA = 25°C P D 225 Derate above 25°C 1.8 Thermal Resistance, Junction to Ambient R θJA 556 Total Device Dissipation Alumina Substrate, (2) TA = 25°C P D 300 Derate above 25°C 2.4 Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA T J , T stg 417 –55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) mW mW/°C °C/W mW mW/°C °C/W °C Characteristic Symbol Min Max OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) LMBTA42 LMBTA43 Collector–Base Breakdown Voltage (I C= 100 µAdc, I E= 0) LMB...