LMBTA43LT3G Voltage Transistors Datasheet

LMBTA43LT3G Datasheet, PDF, Equivalent


Part Number

LMBTA43LT3G

Description

High Voltage Transistors

Manufacture

Leshan Radio Company

Total Page 4 Pages
Datasheet
Download LMBTA43LT3G Datasheet


LMBTA43LT3G
High Voltage Transistors
LESHAN RADIO COMPANY, LTD.
ƽ We declare that the material of product
compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
LMBTA42LT1G
LMBTA43LT1G
S-LMBTA42LT1G
S-LMBTA43LT1G
LMBTA42LT1G
LMBTA42LT3G
1D
1D
SOT-23
SOT-23
3000/Tape&Reel
10000/Tape&Reel
LMBTA43LT1G
M1E
SOT-23 3000/Tape&Reel
LMBTA43LT3G
MAXIMUM RATINGS
Rating
M1E
SOT-23 10000/Tape&Reel
Value
Symbol LMBTA42 LMBTA43 Unit
Collector–Emitter Voltage
V CEO
300
200 Vdc
Collector–Base Voltage
V CBO
300
200 Vdc
Emitter–Base Voltage
V EBO
6.0
6.0 Vdc
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
500 mAdc
Characteristic
Symbol
Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D 225
Derate above 25°C
1.8
Thermal Resistance, Junction to Ambient
R θJA
556
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
P D 300
Derate above 25°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
T J , T stg
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Characteristic
Symbol
Min Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
LMBTA42
LMBTA43
Collector–Base Breakdown Voltage
(I C= 100 µAdc, I E= 0)
LMBTA42
LMBTA43
Emitter–Base Breakdown Voltage
(I E= 100 µAdc, I C= 0)
Collector Cutoff Current
( V CB= 200Vdc, I E= 0)
( V CB= 160Vdc, I E= 0)
Emitter Cutoff Current
LMBTA42
LMBTA43
( V EB= 6.0Vdc, I C= 0)
LMBTA42
( V EB= 4.0Vdc, I C= 0)
LMBTA43
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
300
200
300
200
6.0
0.1
0.1
0.1
0.1
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
Rev.A 1/4

LMBTA43LT3G
LESHAN RADIO COMPANY, LTD.
LMBTA42LT1G LMBTA43LT1G
S-LMBTA42LT1G S-LMBTA43LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS (3)
DC Current Gain
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
Both Types
Both Types
LMBTA42
hFE
(I C = 30 mAdc, V CE = 10 Vdc)
LMBTA43
Min
25
40
40
40
Collector–Emitter Saturation Voltage
(I C = 20 mAdc, I B = 2.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 20 mAdc, I B= 2.0 mAdc)
LMBTA42
LMBTA43
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product
(V CE = 20 Vdc, I C = 10mA, f = 100 MHz)
Collector – Base Capacitance
(V CB= 20 Vdc, I E = 0, f = 1.0 MHz)
LMBTA42
LMBTA43
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
VCE(sat)
V
BE(sat)
fT 50
C cb
Max Unit
––
Vdc
0.5
0.5
0.9 Vdc
— MHz
pF
3.0
4.0
Rev.A 2/4


Features High Voltage Transistors LESHAN RADIO C OMPANY, LTD. ƽ We declare that the ma terial of product compliance with RoHS requirements. ƽ S- Prefix for Automoti ve and Other Applications Requiring Uni que Site and Control Change Requirement s; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATI ON Device Marking Package Shipping LMBTA42LT1G LMBTA43LT1G S-LMBTA42LT1G S-LMBTA43LT1G LMBTA42LT1G LMBTA42LT3G 1D 1D SOT-23 SOT-23 3000/Tape&Reel 1 0000/Tape&Reel LMBTA43LT1G M1E SOT-2 3 3000/Tape&Reel LMBTA43LT3G MAXIMUM R ATINGS Rating M1E SOT-23 10000/Tape&R eel Value Symbol LMBTA42 LMBTA43 Unit Collector–Emitter Voltage V CEO 30 0 200 Vdc Collector–Base Voltage V CBO 300 200 Vdc Emitter–Base Volt age V EBO 6.0 6.0 Vdc Collector Cur rent — Continuous I C THERMAL CHARACT ERISTICS 500 mAdc Characteristic Sym bol Max Unit Total Device Dissipation FR– 5 Board, (1) TA = 25°C P D 225 Derate above 25°C 1.8 Thermal Resistance, Junction to Ambient R θJA 55.
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