Voltage Transistor. LMBTA93LT1G Datasheet


LMBTA93LT1G Transistor. Datasheet pdf. Equivalent


LMBTA93LT1G


High Voltage Transistor
LESHAN RADIO COMPANY, LTD.

High Voltage Transistor PNP Silicon

FEATURE
ƽHigh voltage. ƽFor Telephony or Professional communication equipment applications. ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

(S-)LMBTA92LT1G

2D

3000/Tape&Reel

(S-)LMBTA92LT3G

2D

10000/Tape&Reel

(S-)LMBTA93LT1G

2E

3000/Tape&Reel

(S-)LMBTA93LT3G

2E

10000/Tape&Reel

LMBTA92LT1G LMBTA93LT1G S-LMBTA92LT1G S-LMBTA93LT1G
3
1 2
SOT–23

MAXIMUM RATINGS Rating

Value Symbol LMBTA92 LMBTA93 Unit

Collector–Emitter Voltage

V CEO

Collector–Base Voltage

V CBO

Emitter–Base Voltage

V EBO

Collector Current — Continuous I C

–300 –200 Vdc

–300 –200 Vdc

–5.0 Vdc

–500

mAdc

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature

Symbol PD
RθJA PD
RθJA TJ , Tstg

Max 225
1.8 556 300
2.4 417 –55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 µs, Duty C...



LMBTA93LT1G
LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
FEATURE
ƽHigh voltage.
ƽFor Telephony or Professional communication equipment applications.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
(S-)LMBTA92LT1G
2D
3000/Tape&Reel
(S-)LMBTA92LT3G
2D
10000/Tape&Reel
(S-)LMBTA93LT1G
2E
3000/Tape&Reel
(S-)LMBTA93LT3G
2E
10000/Tape&Reel
LMBTA92LT1G
LMBTA93LT1G
S-LMBTA92LT1G
S-LMBTA93LT1G
3
1
2
SOT–23
MAXIMUM RATINGS
Rating
Value
Symbol LMBTA92 LMBTA93 Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
–300 –200 Vdc
–300 –200 Vdc
–5.0 Vdc
–500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
225
1.8
556
300
2.4
417
–55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
Rev.A 1/4

LMBTA93LT1G
LESHAN RADIO COMPANY, LTD.
LMBTA92LT1G LMBTA93LT1G
S-LMBTA92LT1G S-LMBTA93LT1G
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
Collector Cutoff Current
( VCB = –200Vdc, IE = 0)
( VCB = –300Vdc, IE = 0)
Collector Cutoff Current
( VEB = –6.0Vdc, IC = 0)
( VEB = –5.0Vdc, IC = 0)
LMBTA92
LMBTA93
LMBTA92
LMBTA93
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS (3)
DC Current Gain
(I C =–1.0mAdc, V CE = –10 Vdc)
(I C = –10 mAdc, V CE = –10Vdc)
(I C = –30mAdc, V CE =–10 Vdc)
Collector–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
Base–Emitter Saturation Voltage
(I C = –20mAdc, I B = –2.0 mAdc)
Both Types
Both Types
LMBTA92
LMBTA93
LMBTA92
LMBTA93
hFE
VCE(sat)
V BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4)
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz)
LMBTA92
LMBTA93
fT
C cb
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
–300
–200
–300
–200
–5.0
Min
25
40
25
25
––
––
50
––
––
Max Unit
Vdc
Vdc
–0.1
–100
–0.05
–100
Vdc
µAdc
µAdc
µAdc
Max
––
––
––
––
–0.5
–0.5
–0.9
Unit
Vdc
Vdc
–– MHz
pF
6.0
8.0
Rev.A 2/4




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