LMBTH10LT3G VHF/UHF Transistors Datasheet

LMBTH10LT3G Datasheet, PDF, Equivalent


Part Number

LMBTH10LT3G

Description

VHF/UHF Transistors

Manufacture

Leshan Radio Company

Total Page 5 Pages
Datasheet
Download LMBTH10LT3G Datasheet


LMBTH10LT3G
LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Ordering Information
LMBTH10LT1G
S-LMBTH10LT1G
Device
LMBTH10LT1G
S-LMBTH10LT1G
LMBTH10LT3G
S-LMBTH10LT3G
Marking
3EM
3EM
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
25
30
3.0
Unit
Vdc
Vdc
Vdc
3
1
2
SOT–23
3
COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
1
BASE
2
EMITTER
(S-)LMBTH10LT1G = 3EM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 1.0 mAdc, I B= 0 )
Collector–Base Breakdown Voltage
(I C = 100 µAdc , I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc , I C= 0)
Collector Cutoff Current
( V CB = 25Vdc , I E = 0 )
Collector Cutoff Current
( V CB = 30Vdc , I E = 0 )
Emitter Cutoff Current
( V EB = 2.0Vdc , I C= 0 )
Emitter Cutoff Current
( V EB = 3.0Vdc , I C= 0 )
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I CBO
I EBO
I EBO
25
30
3.0
— — Vdc
— — Vdc
— Vdc
— 100 nAdc
— 100 uAdc
— 100 nAdc
— 10 uAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/5

LMBTH10LT3G
LESHAN RADIO COMPANY, LTD.
LMBTH10LT1G , S-LMBTH10LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = 4.0 mAdc, V CE = 10 Vdc)
Collector–Emitter Saturation Voltage
(I C = 4.0mAdc, I B = 0.4 mAdc)
Base–Emitter On Voltage
(I C = 4.0mAdc, V CE = 10Vdc)
hFE
VCE(sat)
V BE
60
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz)
Collector –Base Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector –Base Feedback Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Collector Base Time Constant
( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz)
fT
C cb
C rb
rb’ C C
650
Typ
Max Unit
—-
0.5 Vdc
0.95 Vdc
— MHz
0.7 pF
0.65 pF
9.0 ps
Rev.O 2/5


Features LESHAN RADIO COMPANY, LTD. VHF/UHF Tran sistors z We declare that the material of product compliance with RoHS require ments. z S- Prefix for Automotive and O ther Applications Requiring Unique Site and Control Change Requirements; AEC-Q 101 Qualified and PPAP Capable. Orderin g Information LMBTH10LT1G S-LMBTH10LT1 G Device LMBTH10LT1G S-LMBTH10LT1G LMB TH10LT3G S-LMBTH10LT3G Marking 3EM 3EM Shipping 3000/Tape&Reel 10000/Tape&Re el MAXIMUM RATINGS Rating Symbol Va lue Collector–Emitter Voltage Collec tor–Base Voltage Emitter–Base Volta ge V CEO V CBO V EBO 25 30 3.0 Unit Vdc Vdc Vdc 3 1 2 SOT–23 3 COLLECTOR THERMAL CHARACTERISTICS Characteristi c Total Device Dissipation FR– 5 Boar d, (1) TA = 25°C Derate above 25°C Th ermal Resistance, Junction to Ambient T otal Device Dissipation Alumina Substra te, (2) TA = 25°C Derate above 25°C T hermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C.
Keywords LMBTH10LT3G, datasheet, pdf, Leshan Radio Company, VHF/UHF, Transistors, MBTH10LT3G, BTH10LT3G, TH10LT3G, LMBTH10LT3, LMBTH10LT, LMBTH10L, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)