Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon transistor
L2SD2114KVLT1G Series
zFeatures 1) High DC c...
Epitaxial planar type
LESHAN RADIO COMPANY, LTD.
NPN silicon
transistor
L2SD2114KVLT1G Series
zFeatures 1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO =12V (Min.)
3
3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
1 2
4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
VCBO VCEO VEBO
Collector current
IC
Collector power dissipation
Junction temperature Storage temperature
∗ Single pulse Pw=100ms
PC
Tj Tstg
Limits 25 20 12 0.5 1
0.2
150 −55∼+150
Unit V V V
A(DC)
A(Pulse) ∗
W
°C °C
COLLECTOR 3
1 BASE
2 EMITTER
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage
BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat)
25 20 12 − − −
− − − − − 0.18
− − − 0.5 0.5 0.4
V IC=10µA V IC=1mA V IE=10µA µA VCB=20V µA VEB=10V V IC/IB=500mA/20mA
DC current transfer ratio
Transition frequency Output capacitance Output On-resistance
∗ Measured using pulse current
hFE 820 − 2700 − VC...