LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package. I...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package. IC =1.5 A.
ƽEpitaxial planar type. ƽ
NPN complement: L8050H ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050HPLT1G
S-L8050HPLT1G 1HA
3000/Tape&Reel
L8050HPLT3G
S-L8050HPLT3G 1HA
10000/Tape&Reel
L8050HQLT1G
S-L8050HQLT1G 1HC
3000/Tape&Reel
L8050HQLT3G
S-L8050HQLT3G 1HC
10000/Tape&Reel
L8050HRLT1G L8050HRLT3G L8050HSLT1G L8050HSLT3G
S-L8050HRLT1G S-L8050HRLT3G S-L8050HSLT1G S-L8050HSLT3G
1HE 1HE 1HG 1HG
3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO VCBO VEBO
IC
Max 25 40 5 1500
Unit V V V
mAdc
Symbol PD
R θJ A PD
R θJ A T j,T St g
Max
Unit
225 mW 1.8 mW/°C 556 °C/W
300 mW 2.4 mW/°C
417 -55 to +150
°C/W °C
L8050HQLTIG Series
S-L8050HQLTIG Se...